Hsinchu
Taiwan
19
2025-10-09
The entities that hold a legal rights for patent applications filed by inventor GALLAGHER William J.:
William J. GALLAGHER from Hsinchu, TW has applied for patents for these inventions. The list has both pending applications and granted patents:
MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY
#2 | 2024-10-24MTJS WITH LITHOGRAPHY-VARIATION INDEPENDENT CRITICAL DIMENSION
#3 | 2024-09-26MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY
#4 | 2024-03-14MRAM DEVICE HAVING SELF-ALIGNED SHUNTING LAYER
#5 | 2023-11-23Magnetic device and magnetic random access memory
#6 | 2023-03-09MRAM DEVICE HAVING SELF-ALIGNED SHUNTING LAYER
#7 | 2022-12-01Magnetic device and magnetic random access memory
#8 | 2022-11-10Method for forming MTJS with lithography-variation independent critical dimension
#9 | 2021-11-11Magnetic random access memory and manufacturing method thereof
#10 | 2021-07-01Magnetic device and magnetic random access memory
#11 | 2021-05-06Method for forming MTJS with lithography-variation independent critical dimension
#12 | 2021-02-04MRAM device having self-aligned shunting layer
#13 | 2020-05-14Magnetic random access memory and manufacturing method thereof
#14 | 2020-04-02Memory device with superparamagnetic layer
#15 | 2020-01-02Magnetic memory device with balancing synthetic anti-ferromagnetic layer
#16 | 2019-05-30Magnetic random access memory and manufacturing method thereof
#17 | 2018-11-01Write algorithm for memory to reduce failure rate of write operations
#18 | 2017-09-28Semiconductor memory device and method for controlling the same
#19 | 2017-08-15Reference circuit and MRAM
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