Acton, Massachusetts
United States
37
2026-02-19
The entities that hold a legal rights for patent applications filed by inventor Wang Hailing:
Hailing Wang from Acton, US has applied for patents for these inventions. The list has both pending applications and granted patents:
COMPACT INTEGRATION OF STACKED POWER AMPLIFIER DESIGNS
#2 | 2025-11-20UNIT CELL FOR METAL FILL
#3 | 2025-09-25MAIN-AUXILIARY FIELD-EFFECT TRANSISTOR CONFIGURATIONS
#4 | 2025-01-02Main-auxiliary field-effect transistor configurations
#5 | 2024-07-25FIELD-EFFECT TRANSISTORS WITH INTERLEAVED FINGER CONFIGURATION
#6 | 2024-03-07MULTILAYER CAPACITORS WITH INTERDIGITATED FINGERS
#7 | 2024-01-25Main-auxiliary field-effect transistor configurations
#8 | 2023-07-27SILICON-ON-INSULATOR SUBSTRATE PROCESSING FOR TRANSISTOR ENHANCEMENT
#9 | 2023-03-16Switches with main-auxiliary field-effect transistor configurations
#10 | 2023-01-12BODY CONTACT FET
#11 | 2022-08-11FRONT END INTEGRATED CIRCUITS INCORPORATING DIFFERING SILICON-ON-INSULATOR TECHNOLOGIES
#12 | 2022-02-03Switches with main-auxiliary field-effect transistor configurations
#13 | 2021-10-28STACKED FIELD-EFFECT TRANSISTORS HAVING PROXIMITY ELECTRODES AND PROXIMITY BIAS CIRCUITS
#14 | 2021-08-26Fabricating field-effect transistors with interleaved source and drain finger configuration
#15 | 2021-05-20Cascode amplifier optimization
#16 | 2021-03-11Main-auxiliary field-effect transistor configurations with an auxiliary stack and interior parallel transistors
#17 | 2020-07-16Main-auxiliary field-effect transistor configurations with interior parallel transistors
#18 | 2020-06-18Independently controlled main-auxiliary branch configurations for radio frequency applications
#19 | 2020-04-02Stacked field-effect transistors having proximity electrodes
#20 | 2020-03-05Fabricating field-effect transistors with body contacts between source, gate and drain assemblies
#21 | 2020-02-13Segmented main-auxiliary branch configurations for radio frequency applications
#22 | 2018-11-15RADIO FREQUENCY SYSTEM WITH SWITCH TO RECEIVE ENVELOPE
#23 | 2018-11-01Switches with multiple field-effect transistors having proximity electrodes
#24 | 2018-08-16Cascode amplifier optimization
#25 | 2018-03-29Main-auxiliary field-effect transistor structures for radio frequency applications
#26 | 2018-03-29Series main-auxiliary field-effect transistor configurations for radio frequency applications
#27 | 2018-03-29Parallel main-auxiliary field-effect transistor configurations for radio frequency applications
#28 | 2018-03-29Hybrid main-auxiliary field-effect transistor configurations for radio frequency applications
#29 | 2018-03-29Stacked auxiliary field-effect transistors with buffers for radio frequency applications
#30 | 2018-03-29Stacked auxiliary field-effect transistor configurations for radio frequency applications
#31 | 2018-02-08Switch with envelope injection
#32 | 2018-02-08Radio frequency system with switch to receive envelope
#33 | 2017-10-05Field-effect transistor devices having proximity contact features
#34 | 2017-10-05VARIABLE BURIED OXIDE THICKNESS FOR SILICON-ON-INSULATOR DEVICES
#35 | 2017-10-05VARIABLE HANDLE WAFER RESISTIVITY FOR SILICON-ON-INSULATOR DEVICES
#36 | 2017-10-05Non-symmetric body contacts for field-effect transistors
#37 | 2017-10-05Body contacts for field-effect transistors
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