Inventor profile of:

Moritz BECKER

City:

Aalen

Country:

Germany

Published Applications:

14

Last publication date:

2026-06-04

Top Assignees for applications by Moritz BECKER

The entities that hold a legal rights for patent applications filed by inventor BECKER Moritz:

Recent patent applications by BECKER Moritz

Moritz BECKER from Aalen, DE has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-06-04
US20260153812A1
Physics

OPTICAL ASSEMBLY FOR AN EUV PROJECTION EXPOSURE APPARATUS, EUV PROJECTION EXPOSURE APPARATUS

#2 | 2025-09-04
US20250278025A1
Physics

EUV OPTICS MODULE FOR AN EUV PROJECTION EXPOSURE APPARATUS

#3 | 2024-09-26
US20240319621A1
Physics

APPARATUS AND METHOD FOR AVOIDING A DEGRADATION OF AN OPTICAL USED SURFACE OF A MIRROR MODULE, PROJECTION SYSTEM, ILLUMINATION SYSTEM AND PROJECTION EXPOSURE APPARATUS

#4 | 2024-09-12
US20240302756A1
Physics

METHOD FOR DEPOSITING A COVER LAYER, EUV LITHOGRAPHY SYSTEM AND OPTICAL ELEMENT

#5 | 2024-09-12
US20240302304A1
Physics

ELECTRON MICROSCOPE FOR EXAMINING A SPECIMEN

#6 | 2024-07-25
US20240248408A1
Physics

MULTI-MIRROR ARRAY

#7 | 2023-02-09
US20230041588A1
Physics

Method for operating an EUV lithography apparatus, and EUV lithography apparatus

#8 | 2022-09-29
US20220308457A1
Physics

Projection exposure apparatus having a device for determining the concentration of atomic hydrogen

#9 | 2020-06-11
US20200183292A1
Physics

Method for operating an optical apparatus, and optical apparatus

#10 | 2020-05-28
US20200166847A1
Physics

Optical arrangement for EUV radiation with a shield for protection against the etching effect of a plasma

#11 | 2020-05-07
US20200142327A1
Physics

Method for removing a contamination layer by an atomic layer etching process

#12 | 2019-08-08
US20190243258A1
Physics

Projection exposure system for semiconductor lithography, comprising elements for plasma conditioning

#13 | 2019-06-06
US20190171108A1
Physics

Reflective optical element for EUV lithography

#14 | 2017-10-12
US20170292830A1
Physics

Method for determining the thickness of a contaminating layer and/or the type of contaminating material, optical element and EUV-lithography system

InventorID:

2009008 ⎘