Inventor profile of:

Ryan Meyer

City:

Boise, Idaho

Country:

United States

Published Applications:

9

Last publication date:

2022-04-14

Top Assignees for applications by Ryan Meyer

The entities that hold a legal rights for patent applications filed by inventor Meyer Ryan:

Recent patent applications by Meyer Ryan

Ryan Meyer from Boise, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2022-04-14
US20220115401A1
Electricity

Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus

#2 | 2020-10-08
US20200321352A1
Electricity

Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus

#3 | 2019-12-05
US20190371815A1
Electricity

Arrays of elevationally-extending strings of memory cells having a stack comprising vertically-alternating insulative tiers and wordline tiers and horizontally-elongated trenches in the stacks

#4 | 2019-08-20
US15992959
Electricity

Methods of forming an array of elevationally-extending strings of memory cells having a stack comprising vertically-alternating insulative tiers and wordline tiers and horizontally-elongated trenches in the stack

#5 | 2019-07-25
US20190229127A1
Electricity

Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistor

#6 | 2019-02-07
US20190043890A1
Electricity

Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus

#7 | 2018-10-04
US20180286879A1
Electricity

Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistor

#8 | 2018-02-15
US20180047739A1
Electricity

Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistor

#9 | 2017-10-19
US20170301685A1
Electricity

Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus

InventorID:

2016493 ⎘