Inventor profile of:

Amos Fenigstein

City:

Haifa

Country:

Israel

Published Applications:

23

Last publication date:

2023-02-09

Top Assignees for applications by Amos Fenigstein

The entities that hold a legal rights for patent applications filed by inventor Fenigstein Amos:

Recent patent applications by Fenigstein Amos

Amos Fenigstein from Haifa, IL has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2023-02-09
US20230042154A1
Physics

Wavelength selective radiation sensor

#2 | 2020-01-30
US20200036922A1
Electricity

Image sensor module and a method for sensing

#3 | 2019-10-03
US20190302242A1
Physics

Active quenching for single-photon avalanche diode using one- shot circuit

#4 | 2018-04-05
US20180097510A1
Electricity

Schmitt trigger circuit with hysteresis determined by modified polysilicon gate dopants

#5 | 2017-11-09
US20170323912A1
Electricity

Image sensor pixel with memory node having buried channel and diode portions formed on N-type substrate

#6 | 2017-08-03
US20170221941A1
Electricity

Backside illuminated (BSI) CMOS image sensor (CIS) with a resonant cavity and a method for manufacturing the BSI CIS

#7 | 2017-07-27
US20170213896A1
Electricity

Method for manufacturing a trench metal insulator metal capacitor

#8 | 2016-10-20
US20160307203A1
Physics

Image sensor module and a method for evaluating an image sensor

#9 | 2016-09-29
US20160286151A1
Electricity

Image sensor pixel with memory node having buried channel and diode portions

#10 | 2016-05-12
US20160133666A1
Electricity

Back-end processing using low-moisture content oxide cap layer

#11 | 2016-01-07
US20160005896A1
Electricity

Apparatus, system and method of back side illumination (BSI) complementary metal-oxide-semiconductor (CMOS) pixel array

#12 | 2015-12-03
US20150350584A1
Electricity

Single-exposure high dynamic range CMOS image sensor pixel with internal charge amplifier

#13 | 2014-09-18
US20140263950A1
Electricity

Single-exposure high dynamic range CMOS image sensor pixel with internal charge amplifier

#14 | 2014-08-14
US20140226047A1
Electricity

Shared readout low noise global shutter image sensor method

#15 | 2014-08-14
US20140226046A1
Electricity

Shared readout low noise global shutter image sensor

#16 | 2013-04-25
US20130099091A1
Electricity

Device having an avalanche photo diode and a method for sensing photons

#17 | 2011-01-20
US20110013064A1
Electricity

CMOS image sensor with wide (intra-scene) dynamic range

#18 | 2010-09-23
US20100237228A1
Electricity

CMOS image sensor pixel with an NMOS charge amplifier

#19 | 2009-10-22
US20090261235A1
Electricity

CMOS image sensor with high sensitivity wide dynamic range pixel for high resolution applications

#20 | 2009-07-16
US20090181491A1
Physics

High-resolution integrated X-ray CMOS image sensor

#21 | 2008-05-29
US20080121808A1
Physics

High resolution integrated X-ray CMOS image sensor

#22 | 2007-09-27
US20070224751A1
Physics

Embedded non-volatile memory cell with charge-trapping sidewall spacers

#23 | 2006-06-15
US20060125122A1
Physics

Embedded non-volatile memory cell with charge-trapping sidewall spacers

InventorID:

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