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Inventor profile of:

James Stephen Speck

City:

Goleta, California

Country:

United States

Published Applications:

Last publication date:

2013-04-25

Top Assignees for applications by James Stephen Speck

The entities that hold a legal rights for patent applications filed by inventor Speck James Stephen:

The Regents of the University of California 15 Oakland, CA United States
The Japan Science and Technology Agency 2 Kawaguchi, Saitama Prefecture, Japan
The Agency of Industrial Science and Technology 1 Kawaguchi, Japan
JAPAN SCIENCE AND TECHNOLOGY AGENCY 1 Kawaguchi City, Japan
THE JAPAN SCIENCE AND TECHNOLOGY AGENCY 1 Kawaguchi City, Japan
Japan Science and Technology Agency 1 Kawaguchi, Saitama Prefecture, Japan

Recent patent applications by Speck James Stephen

James Stephen Speck from Goleta, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2013-04-25

US20130100978A1

Electricity

HOLE BLOCKING LAYER FOR THE PREVENTION OF HOLE OVERFLOW AND NON-RADIATIVE RECOMBINATION AT DEFECTS OUTSIDE THE ACTIVE REGION

#2 | 2013-04-25

US20130099202A1

Electricity

SUPPRESSION OF RELAXATION BY LIMITED AREA EPITAXY ON NON-C-PLANE (In,Al,B,Ga)N

#3 | 2012-08-16

US20120205623A1

Chemistry; metallurgy

NON-POLAR (Al,B,In,Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES

#4 | 2012-02-16

US20120037884A1

Electricity

Thin p-type gallium nitride and aluminum gallium nitride electron-blocking layer free gallium nitride-based light emitting diodes

#5 | 2011-09-22

US20110229639A1

Chemistry; metallurgy

Non-polar gallium nitride thin films grown by metalorganic chemical vapor deposition

#6 | 2011-08-25

US20110204329A1

Chemistry; metallurgy

Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices

#7 | 2011-08-11

US20110193094A1

Electricity

GROWTH OF PLANAR REDUCED DISLOCATION DENSITY M-PLANE GALLIUM NITRIDE BY HYDRIDE VAPOR PHASE EPITAXY

#8 | 2009-06-11

US20090146162A1

Electricity

Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition

#9 | 2007-08-09

US20070184637A1

Electricity

Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy

#10 | 2007-05-17

US20070111488A1

Electricity

Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition

#11 | 2006-12-14

US20060278865A1

Chemistry; metallurgy

Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices

#12 | 2005-11-03

US20050245095A1

Chemistry; metallurgy

Growth of planar reduced dislocation density -plane gallium nitride by hydride vapor phase epitaxy

#13 | 2005-09-29

US20050214992A1

Electricity

Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition

#14 | 2005-05-31

US10413913

Dislocation reduction in non-polar gallium nitride thin films

#15 | 2005-02-24

US20050040385A1

Chemistry; metallurgy

Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices

InventorID:

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