Inventor profile of:

Yuji Ando

City:

Tokyo

Country:

Japan

Published Applications:

34

Last publication date:

2021-04-29

Top Assignees for applications by Yuji Ando

The entities that hold a legal rights for patent applications filed by inventor Ando Yuji:

Recent patent applications by Ando Yuji

Yuji Ando from Tokyo, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2021-04-29
US20210125417A1
Physics

Information processing device, information processing method, program, and movable object

#2 | 2020-04-16
US20200120824A1
Electricity

Electronic machine

#3 | 2018-08-16
US20180233590A1
Electricity

FIELD EFFECT TRANSISTOR AND MULTILAYERED EPITAXIAL FILM FOR USE IN PREPARATION OF FIELD EFFECT TRANSISTOR

#4 | 2014-12-18
US20140367743A1
Electricity

Field effect transistor, and multilayered epitaxial film for use in preparation of field effect transistor

#5 | 2013-05-09
US20130113028A2
Electricity

Semiconductor device and field effect transistor

#6 | 2013-05-02
US20130105811A1
Electricity

Field effect transistor, method for producing the same, and electronic device

#7 | 2013-04-25
US20130099245A1
Electricity

FIELD EFFECT TRANSISTOR, METHOD FOR PRODUCING THE SAME, AND ELECTRONIC DEVICE

#8 | 2012-09-13
US20120228674A1
Electricity

Semiconductor device, field-effect transistor, and electronic device

#9 | 2012-08-30
US20120217547A1
Electricity

Field effect transistor with reduced gate leakage current

#10 | 2011-12-08
US20110297954A1
Electricity

Semiconductor device, schottky barrier diode, electronic apparatus, and method of producing semiconductor device

#11 | 2011-11-24
US20110284865A1
Electricity

Heterojunction field effect transistor, method for producing heterojunction field effect transistor, and electronic device

#12 | 2011-11-17
US20110278586A1
Electricity

Bipolar transistor

#13 | 2011-10-27
US20110260217A1
Electricity

Semiconductor apparatus having reverse blocking characteristics and method of manufacturing the same

#14 | 2011-10-06
US20110241075A1
Electricity

Group nitride bipolar transistor

#15 | 2011-01-13
US20110006346A1
Electricity

Semiconductor device using a group III nitride-based semiconductor

#16 | 2010-12-30
US20100327318A1
Electricity

Semiconductor device and manufacturing method of the same

#17 | 2010-11-04
US20100276732A1
Electricity

Semiconductor device

#18 | 2010-09-16
US20100230684A1
Electricity

Semiconductor device

#19 | 2010-09-09
US20100224910A1
Electricity

Field effect transistor with reduced gate leakage current

#20 | 2010-02-18
US20100038680A1
Electricity

III-nitride semiconductor field effect transistor

#21 | 2009-10-29
US20090267114A1
Electricity

FIELD EFFECT TRANSISTOR

#22 | 2009-09-17
US20090230430A1
Electricity

Field effect transistor

#23 | 2009-09-17
US20090230429A1
Electricity

Field effect transistor

#24 | 2009-07-09
US20090173968A1
Electricity

Field Effect Transistor

#25 | 2009-02-19
US20090045438A1
Electricity

Field effect transistor, and multilayered epitaxial film for use in preparation of field effect transistor

#26 | 2009-01-08
US20090008678A1
Electricity

SEMICONDUCTOR DEVICE

#27 | 2008-07-31
US20080179743A1
Electricity

Electrode, method for producing same and semiconductor device using same

#28 | 2007-07-19
US20070164305A1
Electricity

Ohmic electrode structure of nitride semiconductor device

#29 | 2007-07-12
US20070158692A1
Electricity

Semiconductor device

#30 | 2007-01-25
US20070018316A1
Electricity

Electrode, method for producing same and semiconductor device using same

#31 | 2006-05-18
US20060102929A1
Electricity

Field-effect transistor having group III nitride electrode structure

#32 | 2006-03-16
US20060054929A1
Electricity

Semiconductor device

#33 | 2006-03-02
US20060043415A1
Electricity

Field-effect transistor

#34 | 2005-07-14
US20050151255A1
Electricity

Semiconductor device having Schottky junction electrode

InventorID:

205089 ⎘