Inventor profile of:

Timothy Dooling Sullivan

City:

Underhill, Vermont

Country:

United States

Published Applications:

17

Last publication date:

2015-04-30

Top Assignees for applications by Timothy Dooling Sullivan

The entities that hold a legal rights for patent applications filed by inventor Sullivan Timothy Dooling:

Recent patent applications by Sullivan Timothy Dooling

Timothy Dooling Sullivan from Underhill, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2015-04-30
US20150115982A1
Physics

Structures and methods for monitoring dielectric reliability with through-silicon vias

#2 | 2013-10-03
US20130258765A1
Physics

Method of changing reflectance or resistance of a region in an optoelectronic memory device

#3 | 2013-01-10
US20130008699A1
Electricity

Ball-limiting-metallurgy layers in solder ball structures

#4 | 2012-11-15
US20120287707A1
Physics

OPTOELECTRONIC MEMORY DEVICES

#5 | 2012-09-27
US20120241916A1
Electricity

Wafer edge conditioning for thinned wafers

#6 | 2012-08-09
US20120199983A1
Electricity

Enhanced electromigration resistance in TSV structure and design

#7 | 2012-08-09
US20120199975A1
Electricity

Enhanced electromigration resistance in TSV structure and design

#8 | 2011-11-24
US20110284280A1
Electricity

Optically transparent wires for secure circuits and methods of making same

#9 | 2010-11-18
US20100290264A1
Physics

Optoelectronic memory devices

#10 | 2010-10-14
US20100258940A1
Electricity

Ball-limiting-metallurgy layers in solder ball structures

#11 | 2010-06-03
US20100133691A1
Electricity

Thermally programmable anti-reverse engineering interconnects wherein interconnects only conduct when heated above room temperature

#12 | 2009-11-05
US20090273084A1
Electricity

Optically transparent wires for secure circuits and methods of making same

#13 | 2009-08-27
US20090212431A1
Electricity

Method of making thermally programmable anti-reverse engineering interconnects wherein interconnects only conduct when heated above room temperature

#14 | 2008-11-06
US20080274583A1
Electricity

Through-wafer vias

#15 | 2008-10-30
US20080265422A1
Electricity

Structure for charge dissipation during fabrication of integrated circuits and isolation thereof

#16 | 2008-08-28
US20080203495A1
Electricity

Integration circuits for reducing electromigration effect

#17 | 2007-01-18
US20070013072A1
Electricity

Method and structure for charge dissipation during fabrication of integrated circuits and isolation thereof

InventorID:

21042 ⎘