Fremont, California
United States
24
2025-10-16
The entities that hold a legal rights for patent applications filed by inventor Chen Jun:
Jun Chen from Fremont, US has applied for patents for these inventions. The list has both pending applications and granted patents:
NOVEL SPIN-ORBIT TORQUE MAGNETIC-RAM HAVING SPIN DIFFUSION BARRIER LAYERS
#2 | 2023-03-02Magnetoresistive element having a nano-current-channel structure
#3 | 2023-02-09PERPENDICULAR MTJ ELEMENT HAVING A SOFT-MAGNETIC ADJACENT LAYER AND METHODS OF MAKING THE SAME
#4 | 2023-01-12PERPENDICULAR MTJ ELEMENT HAVING A CUBE-TEXTURED REFERENCE LAYER AND METHODS OF MAKING THE SAME
#5 | 2022-11-10Methods of forming perpendicular magnetoresistive elements using sacrificial layers
#6 | 2022-09-01Magnetoresistive element having an adjacent-bias layer and a toggle writing scheme
#7 | 2022-08-04COMPOSITE RECORDING STRUCTURE FOR AN IMPROVED WRITE PROFERMANCE
#8 | 2022-07-28MAGNETORESISTIVE ELEMENT HAVING A COMPOSITE RECORDING STRUCTURE
#9 | 2022-05-26Magnetoresistive element having a giant interfacial perpendicular magnetic anisotropy and method of making the same
#10 | 2022-05-12Magnetoresistive element having a giant interfacial perpendicular magnetic anisotropy
#11 | 2022-02-24Making a memoristic array with an implanted hard mask
#12 | 2022-02-24Composite seed structure to improve PMA for perpendicular magnetic pinning
#13 | 2022-02-10MAGNETORESISTIVE ELEMENT HAVING A SIDEWALL-CURRENT-CHANNEL STRUCTURE
#14 | 2022-02-10STT-SOT hybrid magnetoresistive element and manufacture thereof
#15 | 2021-11-04Composite multi-stack seed layer to improve PMA for perpendicular magnetic pinning
#16 | 2021-10-21Ultra-fast magnetic random access memory having a composite SOT-MTJ structure
#17 | 2021-10-21Bottom-pinned magnetic random access memory having a composite SOT structure
#18 | 2021-09-02Composite multi-stack seed layer to improve PMA for perpendicular magnetic pinning
#19 | 2021-07-29Synthetic magnetic pinning element having strong antiferromagnetic coupling
#20 | 2021-06-24A MAGNETIC RANDOM ACCESS MEMORY STORAGE ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY
#21 | 2019-09-24Method and apparatus for efficient and accurate signal electromigration analysis of digital-on-top designs with complex interface pin shapes
#22 | 2018-02-01METHOD TO MAKE MAGNETIC RAMDOM ACCESSS MEMROY ARRAY WITH SMALL FOOTPRINT
#23 | 2012-04-12Process for MEMS scanning mirror with mass remove from mirror backside
#24 | 2007-03-08Structure and fabrication of an MRAM cell
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