Daisuke SHIBATA

City:

Toyama

Country:

Japan

Published Applications:

Last publication date:

2013-05-09

Top Assignees for applications by Daisuke SHIBATA

The entities that hold a legal rights for patent applications filed by inventor SHIBATA Daisuke:

Daisuke SHIBATA from Toyama, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

Heterojunction field-effect transistor with field plate connected to gate or source electrode

Diode with heterojunction of nitride semiconductor layers

Nitride semiconductor device having reduced interface leakage currents

InventorID:

217441 ⎘