Siddarth A. Krishnan

Expitaxially regrown heterostructure nanowire lateral tunnel field effect transistor

Structures with thinned dielectric material

Expitaxially regrown heterostructure nanowire lateral tunnel field effect transistor

Method and structure for III-V nanowire tunnel FETs

Alternative threshold voltage scheme via direct metal gate patterning for high performance CMOS FinFETs

Replacement channel TFET

Modified tungsten silicon

Constrained nanosecond laser anneal of metal interconnect structures

Method of patterning dopant films in high-k dielectrics in a soft mask integration scheme

Field effect transistors having multiple effective work functions

Variable length multi-channel replacement metal gate including silicon hard mask

Variable length multi-channel replacement metal gate including silicon hard mask

Semiconductor devices having different gate oxide thicknesses

Thermally stable high-K tetragonal HFO2 layer within high aspect ratio deep trenches

FIN Field Effect Transistors Having Multiple Threshold Voltages

Intrinsic Channel Planar Field Effect Transistors Having Multiple Threshold Voltages

Concurrently forming nFET and pFET gate dielectric layers

Structure and method of Tscaling for high k metal gate technology

Germanium oxide free atomic layer deposition of silicon oxide and high-k gate dielectric on germanium containing channel for CMOS devices

Non-volatile memory structure employing high-k gate dielectric and metal gate

Semiconductor devices having different gate oxide thicknesses

ETCH STOP LAYER FORMATION IN METAL GATE PROCESS

Etch stop layer formation in metal gate process

Replacement gate with reduced gate leakage current

Replacement metal gate structures providing independent control on work function and gate leakage current

Structure and method of Tscaling for high k metal gate technology

Thermally stable high-K tetragonal HFOlayer within high aspect ratio deep trenches

Germanium oxide free atomic layer deposition of silicon oxide and high-k gate dielectric on germanium containing channel for CMOS devices

Non-volatile memory structure employing high-k gate dielectric and metal gate

Replacement gate with reduced gate leakage current

Structure and method of Tscaling for high κ metal gate technology

Replacement gate devices with barrier metal for simultaneous processing

Replacement metal gate structures providing independent control on work function and gate leakage current

Method to optimize work function in complementary metal oxide semiconductor (CMOS) structures

Gate effective-workfunction modification for CMOS

METHOD AND STRUCTURE FOR THRESHOLD VOLTAGE CONTROL AND DRIVE CURRENT IMPROVEMENT FOR HIGH-K METAL GATE TRANSISTORS

Semiconductor device having dual metal gates and method of manufacture

Method of forming gate stack and structure thereof

Gate effective-workfunction modification for CMOS

Nitrogen based plasma process for metal gate MOS device