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Inventor profile of:

BethAnn Rainey

City:

Williston, Vermont

Country:

United States

Published Applications:

Last publication date:

2013-05-30

Top Assignees for applications by BethAnn Rainey

The entities that hold a legal rights for patent applications filed by inventor Rainey BethAnn:

INTERNATIONAL BUSINESS MACHINES CORPORATION 12 ARMONK, NY United States

Recent patent applications by Rainey BethAnn

BethAnn Rainey from Williston, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2013-05-30

US20130134518A1

Electricity

Noble gas implantation region in top silicon layer of semiconductor-on-insulator substrate

#2 | 2013-05-02

US20130105981A1

Electricity

Flattened substrate surface for substrate bonding

#3 | 2010-08-12

US20100203689A1

Electricity

FinFET transistor and circuit

#4 | 2009-04-23

US20090106726A1

Electricity

Structures including means for lateral current carrying capability improvement in semiconductor devices

#5 | 2009-01-01

US20090007051A1

Physics

Selectable device options for characterizing semiconductor devices

#6 | 2008-12-18

US20080308940A1

Electricity

LATERAL CURRENT CARRYING CAPABILITY IMPROVEMENT IN SEMICONDUCTOR DEVICES

#7 | 2008-07-24

US20080176363A1

Electricity

Virtual body-contacted trigate

#8 | 2008-05-29

US20080122096A1

Electricity

Methods for lateral current carrying capability improvement in semiconductor devices

#9 | 2008-05-01

US20080099795A1

Electricity

FinFET transistor and circuit

#10 | 2007-02-01

US20070023756A1

Electricity

Virtual body-contacted trigate

#11 | 2006-11-16

US20060255410A1

Electricity

FinFET transistor and circuit

#12 | 2005-10-13

US20050224890A1

Electricity

FinFET transistor and circuit

#13 | 2005-03-22

US10707756

Self-aligned raised extrinsic base bipolar transistor structure and method

InventorID:

217737 ⎘