Inventor profile of:

Michael Graf

City:

Leutenbach

Country:

Germany

Published Applications:

24

Last publication date:

2021-08-05

Top Assignees for applications by Michael Graf

The entities that hold a legal rights for patent applications filed by inventor Graf Michael:

Recent patent applications by Graf Michael

Michael Graf from Leutenbach, DE has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2021-08-05
US20210242195A1
Electricity

Protective circuit against electrostatic discharges

#2 | 2018-05-24
US20180143233A1
Physics

Device and method for detecting a number of electrostatic discharges

#3 | 2011-10-27
US20110260250A1
Electricity

Low leakage FINFETs

#4 | 2009-11-05
US20090273883A1
Electricity

Method and system for incorporating high voltage devices in an EEPROM

#5 | 2009-10-15
US20090258472A1
Electricity

Semiconductor array and method for manufacturing a semiconductor array

#6 | 2008-11-27
US20080290426A1
Electricity

DMOS DEVICE WITH SEALED CHANNEL PROCESSING

#7 | 2008-11-13
US20080278874A1
Electricity

Electrostatic discharge (ESD) protection structure and a circuit using the same

#8 | 2007-12-20
US20070290226A1
Electricity

Method for producing a semiconductor arrangement, semiconductor arrangement and its application

#9 | 2007-11-15
US20070264792A1
Electricity

Method for producing deep trench structures

#10 | 2007-11-15
US20070262376A1
Electricity

High-voltage field-effect transistor

#11 | 2007-10-11
US20070235779A1
Electricity

Lateral DMOS transistor and method for the production thereof

#12 | 2007-10-04
US20070228425A1
Electricity

Method and manufacturing low leakage MOSFETs and FinFETs

#13 | 2007-09-27
US20070221965A1
Electricity

DMOS device with sealed channel processing

#14 | 2007-09-06
US20070207589A1
Physics

REGISTRATION MARK WITHIN AN OVERLAP OF DOPANT REGIONS

#15 | 2007-07-19
US20070164443A1
Electricity

Semiconductor array and method for manufacturing a semiconductor array

#16 | 2007-06-14
US20070132019A1
Electricity

DMOS transistor with optimized periphery structure

#17 | 2007-05-31
US20070120190A1
Electricity

Electrostatic discharge (ESD) protection structure and a circuit using the same

#18 | 2007-04-26
US20070090432A1
Electricity

Method and system for incorporating high voltage devices in an EEPROM

#19 | 2007-03-01
US20070048959A1
Physics

Registration mark within an overlap of dopant regions

#20 | 2006-12-14
US20060281291A1
Electricity

Method for manufacturing a metal-semiconductor contact in semiconductor components

#21 | 2006-12-14
US20060278923A1
Electricity

Integrated circuit and method for manufacturing an integrated circuit

#22 | 2006-10-05
US20060220138A1
Electricity

ESD protection circuit with scalable current capacity and voltage capacity

#23 | 2005-08-04
US20050170571A1
Electricity

Method of producing active semiconductor layers of different thicknesses in an SOI wafer

#24 | 2005-08-04
US20050167779A1
Electricity

Process for manufacturing vertically insulated structural components on SOI material of various thickness

InventorID:

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