Milpitas, California
United States
32
2018-06-26
The entities that hold a legal rights for patent applications filed by inventor Wang Zihui:
Zihui Wang from Milpitas, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Perpendicular magnetic fixed layer with high anisotropy
#2 | 2018-03-29Magnetic random access memory with ultrathin reference layer
#3 | 2018-03-15Magnetic memory element with iridium anti-ferromagnetic coupling layer
#4 | 2018-03-15Method for sensing memory element coupled to selector device
#5 | 2017-11-09Magnetic memory element including oxide/metal composite layers formed adjacent to fixed layer
#6 | 2017-10-05MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER
#7 | 2017-08-17Spin-orbitronics device and applications thereof
#8 | 2017-06-08Perpendicular magnetic memory element having magnesium oxide cap layer
#9 | 2016-09-29Magnetic tunnel junction (MTJ) memory element having tri-layer perpendicular reference layer
#10 | 2016-07-21Magnetic random access memory with perpendicular interfacial anisotropy
#11 | 2016-07-14Magnetic random access memory with tri-layer reference layer
#12 | 2016-06-23Unipolar-switching perpendicular MRAM and method for using same
#13 | 2016-03-03Spin-orbitronics device and applications thereof
#14 | 2016-02-25Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layer
#15 | 2015-11-19Voltage-switched magnetic random access memory (MRAM) and method for using the same
#16 | 2015-11-12Magnetic memory element with composite fixed layer
#17 | 2015-10-29Magnetic random access memory with ultrathin reference layer
#18 | 2015-10-29Magnetic random access memory with ultrathin reference layer
#19 | 2015-10-08Magnetic random access memory with perpendicular enhancement layer
#20 | 2015-09-24Magnetic random access memory element having tantalum perpendicular enhancement layer
#21 | 2015-06-18Magnetic random access memory with perpendicular enhancement layer
#22 | 2015-04-16Magnetic tunnel junction with perpendicular enhancement layer and thin reference layer
#23 | 2015-04-16Magnetic random access memory with perpendicular enhancement layer
#24 | 2015-04-16Magnetic random access memory with perpendicular interfacial anisotropy
#25 | 2014-09-04Electric field assisted MRAM and method for using the same
#26 | 2014-07-03Magnetic random access memory having perpendicular enhancement layer and interfacial anisotropic free layer
#27 | 2014-06-05Magnetic random access memory having perpendicular composite reference layer
#28 | 2014-02-13Magnetic random access memory having perpendicular enhancement layer
#29 | 2014-01-09MEMORY SYSTEM HAVING THERMALLY STABLE PERPENDICULAR MAGNETO TUNNEL JUNCTION (MTJ) AND A METHOD OF MANUFACTURING SAME
#30 | 2013-12-19Magnetic tunnel junction with non-metallic layer adjacent to free layer
#31 | 2013-10-17Method and apparatus for programming a spin-transfer torque magnetic random access memory (STTMRAM) array
#32 | 2013-05-02Spin-transfer torque magnetic random access memory (STTMRAM) device with shared transistor and minimal written data disturbance
220283 ⎘