Inventor profile of:

Yan WANG

City:

Wuhan

Country:

China

Published Applications:

20

Last publication date:

2026-03-05

Top Assignees for applications by Yan WANG

The entities that hold a legal rights for patent applications filed by inventor WANG Yan:

Recent patent applications by WANG Yan

Yan WANG from Wuhan, CN has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-03-05
US20260066012A1
Physics

MEMORY DEVICES, MEMORY SYSTEMS, AND OPERATION METHODS THEREOF

#2 | 2026-02-12
US20260044086A1
Physics

MASK, MASK STITCHING METHOD AND EXPOSURE METHOD

#3 | 2025-12-04
US20250369903A1
Physics

HIGH-TEMPERATURE AND HIGH-PRESSURE CORE DISPLACEMENT TEST SYSTEM AND METHOD

#4 | 2025-11-20
US20250356926A1
Physics

METHODS OF OPERATING MEMORIES, MEMORIES AND MEMORY SYSTEMS

#5 | 2025-09-11
US20250285661A1
Physics

PAGE BUFFER, MEMORY DEVICE, AND METHOD FOR PROGRAMMING THEREOF

#6 | 2025-07-15
US19054993
Human necessities

Multifunctional pacemaker wire conversion device and application method thereof

#7 | 2025-05-29
US20250174287A1
Physics

MEMORIES, OPERATION METHODS OF MEMORIES, AND MEMORY SYSTEMS

#8 | 2025-05-22
US20250166674A1
Physics

MEMORY DEVICE INCLUDING PAGE BUFFER, MEMORY SYSTEM INCLUDING PAGE BUFFER, AND OPERATING METHOD THEREOF

#9 | 2025-03-27
US20250104776A1
Physics

MEMORY DEVICE, OPERATION METHOD OF MEMORY DEVICE, AND MEMORY SYSTEM

#10 | 2025-03-06
US20250078934A1
Physics

MEMORY, METHODS OF OPERATING MEMORY, SYSTEMS AND STORAGE MEDIUMS

#11 | 2024-10-03
US20240331749A1
Physics

MEMORY, OPERATION METHOD OF MEMORY, AND MEMORY SYSTEM

#12 | 2024-07-18
US20240242745A1
Physics

Memory device including page buffer, memory system including page buffer, and operating method thereof

#13 | 2024-05-16
US20240161789A1
Physics

Page buffer circuits in three-dimensional memory devices

#14 | 2023-09-14
US20230290388A1
Physics

PAGE BUFFER, MEMORY DEVICE, AND METHOD FOR PROGRAMMING THEREOF

#15 | 2023-05-18
US20230154545A1
Physics

PAGE BUFFER CIRCUIT WITH BIT LINE SELECT TRANSISTOR

#16 | 2022-12-29
US20220415372A1
Physics

Page buffer circuits of three-dimensional memory device

#17 | 2022-12-29
US20220415370A1
Physics

Page buffer circuits in three-dimensional memory devices

#18 | 2022-08-25
US20220267162A1
Chemistry; metallurgy

Modified montmorillonite self-repairing agent and preparation method and use thereof

#19 | 2022-06-16
US20220189559A1
Physics

Page buffer circuit with bit line select transistor

#20 | 2018-06-07
US20180155496A1
Chemistry; metallurgy

PEEK/NANO-HA composites for SLS and preparation methods thereof

InventorID:

2207242 ⎘