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Inventor profile of:

Mitsuaki OYA

City:

Aichi

Country:

Japan

Published Applications:

Last publication date:

2013-01-17

Top Assignees for applications by Mitsuaki OYA

The entities that hold a legal rights for patent applications filed by inventor OYA Mitsuaki:

PANASONIC CORPORATION 11 Osaka, Japan

Recent patent applications by OYA Mitsuaki

Mitsuaki OYA from Aichi, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2013-01-17

US20130015427A1

Electricity

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

#2 | 2013-01-10

US20130009187A1

Electricity

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

#3 | 2011-11-24

US20110284905A1

Electricity

Nitride-based semiconductor device and method for fabricating the same

#4 | 2011-10-20

US20110253977A1

Electricity

Nitride-based semiconductor device having electrode on -plane

#5 | 2011-10-20

US20110253976A1

Electricity

Nitride-based semiconductor device having electrode on m-plane

#6 | 2011-10-13

US20110248308A1

Electricity

Nitride-based semiconductor device having electrode on m-plane

#7 | 2011-10-13

US20110248307A1

Electricity

Nitride semiconductor element and method for producing the same

#8 | 2011-06-30

US20110156048A1

Electricity

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

#9 | 2011-05-05

US20110101372A1

Electricity

Nitride semiconductor element having electrode on m-plane and method for producing the same

#10 | 2011-02-17

US20110037089A1

Electricity

Method for fabricating nitride-based semiconductor device having electrode on -plane

#11 | 2011-02-17

US20110037088A1

Electricity

Method for fabricating nitride-based semiconductor device having electrode on m-plane

#12 | 2011-02-10

US20110031522A1

Electricity

Method for fabricating nitride-based semiconductor device having electrode on -plane

InventorID:

22189 ⎘