Itami-shi
Japan
14
2023-03-16
The entities that hold a legal rights for patent applications filed by inventor TAKASUKA Eiryo:
Eiryo TAKASUKA from Itami-shi, JP has applied for patents for these inventions. The list has both pending applications and granted patents:
Silicon carbide single crystal substrate
#2 | 2013-10-03METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
#3 | 2013-05-02VAPOR-PHASE PROCESS APPARATUS, VAPOR-PHASE PROCESS METHOD, AND SUBSTRATE
#4 | 2012-05-17Metal organic chemical vapor deposition equipment
#5 | 2012-02-02Vapor-phase process apparatus, vapor-phase process method, and substrate
#6 | 2012-01-05Vapor-phase process apparatus, vapor-phase process method, and substrate
#7 | 2011-08-18METHOD FOR MANUFACTURING LIGHT EMITTING ELEMENT AND LIGHT EMITTING ELEMENT
#8 | 2010-07-08GaN SINGLE-CRYSTAL SUBSTRATE, NITRIDE TYPE SEMICONDUCTOR EPITAXIAL SUBSTRATE, NITRIDE TYPE SEMICONDUCTOR DEVICE, AND METHODS OF MAKING THE SAME
#9 | 2009-08-06METHOD OF GROWING GROUP III-V COMPOUND SEMICONDUCTOR, AND METHOD OF MANUFACTURING LIGHT-EMITTING DEVICE AND ELECTRON DEVICE
#10 | 2009-06-11Vapor-phase process apparatus, vapor-phase process method, and substrate
#11 | 2009-05-21Metalorganic chemical vapor deposition reactor
#12 | 2008-06-05Vapor-Phase Growth System and Vapor-Phase Growth Method
#13 | 2008-01-10Metal organic chemical vapor deposition equipment
#14 | 2005-05-05GaN single-crystal substrate, nitride type semiconductor epitaxial substrate, nitride type semiconductor device, and methods of making the same
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