Unterhaching
Germany
29
2026-04-30
The entities that hold a legal rights for patent applications filed by inventor Kaindl Winfried:
Winfried Kaindl from Unterhaching, DE has applied for patents for these inventions. The list has both pending applications and granted patents:
SUPERJUNCTION DEVICE WITH IMPROVED EDGE TERMINATION
#2 | 2025-07-10METHOD FOR OPERATING A POWER TRANSISTOR CIRCUIT
#3 | 2025-04-03METHOD FOR FORMING ELECTRODES, SEMICONDUCTOR DEVICE AND SEMICONDUCTOR WAFER
#4 | 2025-04-03TRANSISTOR DEVICE
#5 | 2025-04-03METHOD FOR PRODUCING A TRANSISTOR DEVICE AND TRANSISTOR DEVICE
#6 | 2023-10-26Method for operating a power transistor circuit
#7 | 2022-03-10Method for forming an insulation layer in a semiconductor body and transistor device
#8 | 2020-12-10Semiconductor device
#9 | 2020-10-01Vertical transistor device having a discharge region comprising at least one lower dose section and located at least partially below a gate electrode pad
#10 | 2020-04-02Method for forming an insulation layer in a semiconductor body and transistor device
#11 | 2019-10-17Latch-up resistant transistor device
#12 | 2017-05-04Latch-up resistant transistor
#13 | 2017-03-02Semiconductor device
#14 | 2016-09-15Super junction semiconductor device having columnar super junction regions extending into a drift layer
#15 | 2015-05-28Super junction semiconductor device having columnar super junction regions
#16 | 2015-04-30Semiconductor Device
#17 | 2015-04-30Semiconductor device
#18 | 2014-11-06Semiconductor device with a super junction structure based on a compensation structure with compensation layers and having a compensation rate gradient
#19 | 2014-08-21Manufacturing a super junction semiconductor device
#20 | 2014-08-21Super junction semiconductor device comprising implanted zones
#21 | 2014-05-08Radiation-hardened power semiconductor devices and methods of forming them
#22 | 2013-01-10Semiconductor device with a dynamic gate-drain capacitance
#23 | 2011-10-06Semiconductor with a dynamic gate-drain capacitance
#24 | 2011-10-06Integrated circuit device and method for its production
#25 | 2010-02-04Semiconductor device with a dynamic gate-drain capacitance
#26 | 2009-12-31SEMICONDUCTOR COMPONENT WITH TWO-STAGE BODY ZONE
#27 | 2009-09-10Semiconductor device having additional capacitance to inherent gate-drain or inherent drain-source capacitance
#28 | 2009-07-23SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
#29 | 2009-06-25INTEGRATED CIRCUIT DEVICE AND METHOD FOR ITS PRODUCTION
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