Shanghai
China
15
2013-10-10
The entities that hold a legal rights for patent applications filed by inventor Chen John:
John Chen from Shanghai, CN has applied for patents for these inventions. The list has both pending applications and granted patents:
Method for dual energy implantation for ultra-shallow junction formation of MOS devices
#2 | 2013-05-02Strained-induced mobility enhancement nano-device structure and integrated process architecture for CMOS technologies
#3 | 2012-06-28STRAINED-INDUCED MOBILITY ENHANCEMENT NANO-DEVICE STRUCTURE AND INTEGRATED PROCESS ARCHITECTURE FOR CMOS TECHNOLOGIES
#4 | 2011-06-16Method for dual energy implantation for ultra-shallow junction formation of MOS devices
#5 | 2009-11-26Poly gate etch method and device for sonos-based flash memory
#6 | 2009-06-18Silicon germanium and polysilicon gate structure for strained silicon transistors
#7 | 2009-03-12Method and structure using a pure silicon dioxide hardmask for gate patterning for strained silicon MOS transistors
#8 | 2008-07-24ETCHING METHOD AND STRUCTURE IN A SILICON RECESS FOR SUBSEQUENT EPITAXIAL GROWTH FOR STRAINED SILICON MOS TRANSISTORS
#9 | 2008-05-22Etching method and structure using a hard mask for strained silicon MOS transistors
#10 | 2007-08-23In-situ doped silicon germanium and silicon carbide source drain region for strained silicon CMOS transistors
#11 | 2007-04-05Method and structure for second spacer formation for strained silicon MOS transistors
#12 | 2007-03-29Strained-induced mobility enhancement nano-device structure and integrated process architecture for CMOS technologies
#13 | 2007-03-22Method and structure using a pure silicon dioxide hardmask for gate patterning for strained silicon MOS transistors
#14 | 2006-08-31Metal hard mask method and structure for strained silicon MOS transistors
#15 | 2005-12-29MOS device for high voltage operation and method of manufacture
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