Tokyo
Japan
34
2013-07-11
The entities that hold a legal rights for patent applications filed by inventor Suzuki Tetsuhiro:
Tetsuhiro Suzuki from Tokyo, JP has applied for patents for these inventions. The list has both pending applications and granted patents:
Magnetoresistive effect element and magnetic random access memory using the same
#2 | 2013-06-06Magnetic memory device and magnetic memory
#3 | 2013-05-09Magnetic memory element, magnetic memory and manufacturing method of magnetic memory
#4 | 2012-11-01Magnetic memory element, magnetic memory and initializing method
#5 | 2011-12-08Magnetic memory element and magnetic memory
#6 | 2011-12-08Magnetic memory element and magnetic memory
#7 | 2011-12-01Non-volatile logic circuit
#8 | 2011-11-03Magnetic memory element and magnetic random access memory
#9 | 2011-10-27Magnetic memory device and magnetic random access memory
#10 | 2011-08-18Method of initializing magnetic memory element
#11 | 2011-08-04Magnetoresistance element, MRAM, and initialization method for magnetoresistance element
#12 | 2011-07-07Magnetic memory and method of manufacturing the same
#13 | 2011-06-30Magnetic random access memory, method of initializing magnetic random access memory and method of writing magnetic random access memory
#14 | 2011-06-02Domain wall motion element and magnetic random access memory
#15 | 2011-05-19Magnetic random access memory and initializing method for the same
#16 | 2011-01-06Semiconductor device
#17 | 2010-12-16Magnetic random access memory and initializing method for the same
#18 | 2010-12-09Magnetic random access memory
#19 | 2010-12-09Magnetic random access memory
#20 | 2010-10-07Magnetoresistance effect element and magnetic random access memory
#21 | 2010-09-23Magnetoresistive element, and magnetic random access memory
#22 | 2010-08-26Magnetic random access memory, write method therefor, and magnetoresistance effect element
#23 | 2010-08-05Magnetic domain wall random access memory
#24 | 2010-08-05Magnetic random access memory and method of manufacturing the same
#25 | 2010-06-10Magnetic memory cell, magnetic random access memory, and data read/write method for magnetic random access memory
#26 | 2010-04-22MRAM utilizing free layer having fixed magnetization regions with larger damping coefficient than the switching region
#27 | 2010-02-25Magnetic random access memory and method of manufacturing the same
#28 | 2009-06-04Magnetic random access memory
#29 | 2009-05-28Magnetoresistive element and magnetic random access memory
#30 | 2008-07-10Magnetic memory and manufacturing method for the same
#31 | 2008-04-17Memory cell and magnetic random access memory
#32 | 2007-01-25Magnetic random access memory and method for manufacturing the same
#33 | 2006-06-20Magnetic random access memory and method for manufacturing the same
#34 | 2006-02-23Magnetic memory adopting synthetic antiferromagnet as free magnetic layer
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