Franklin, Massachusetts
United States
30
2026-02-05
The entities that hold a legal rights for patent applications filed by inventor Struble Wayne Mack:
Wayne Mack Struble from Franklin, US has applied for patents for these inventions. The list has both pending applications and granted patents:
HIGH POWER RADIO FREQUENCY CASCODE DEVICE
#2 | 2025-10-16LAYOUT TECHNIQUES AND OPTIMIZATION FOR POWER TRANSISTORS
#3 | 2024-12-26HIGH VOLTAGE STACKED TRANSISTOR AMPLIFIER
#4 | 2024-12-19ATOMIC LAYER DEPOSITION OF BARRIER METAL LAYER FOR ELECTRODE OF GALLIUM NITRIDE MATERIAL DEVICE
#5 | 2024-08-08III-NITRIDE MATERIAL SEMICONDUCTOR STRUCTURES ON CONDUCTIVE SILICON SUBSTRATES
#6 | 2024-08-01GATE METAL FORMATION ON GALLIUM NITRIDE OR ALUMINUM GALLIUM NITRIDE
#7 | 2024-07-04Extrinsic field termination structures for improving reliability of high-voltage, high-power active devices
#8 | 2024-06-13LAYOUT TECHNIQUES AND OPTIMIZATION FOR POWER TRANSISTORS
#9 | 2024-05-30Parasitic capacitance reduction in GaN-on-silicon devices
#10 | 2023-07-06SUPPRESSION OF PARASITIC ACOUSTIC WAVES IN INTEGRATED CIRCUIT DEVICES
#11 | 2023-06-29MICROWAVE INTEGRATED CIRCUITS INCLUDING GALLIUM-NITRIDE DEVICES ON SILICON
#12 | 2023-06-29MICROWAVE INTEGRATED CIRCUITS INCLUDING GALLIUM-NITRIDE DEVICES ON SILICON
#13 | 2023-06-01Circuit and method of shutdown for bias network in high voltage amplifier
#14 | 2022-10-06High voltage stacked transistor amplifier
#15 | 2022-03-03Atomic layer deposition of barrier metal layer for electrode of gallium nitride material device
#16 | 2022-01-06Parasitic capacitance reduction in GaN devices
#17 | 2021-12-30Gate metal formation on gallium nitride or aluminum gallium nitride
#18 | 2021-12-23Integration of multiple discrete GaN devices
#19 | 2021-11-18Layout techniques and optimization for power transistors
#20 | 2021-09-30Microwave integrated circuits including gallium-nitride devices on silicon
#21 | 2021-09-30Heterolithic microwave integrated circuits including gallium-nitride devices on intrinsic semiconductor
#22 | 2021-09-23Reduced interfacial area III-nitride material semiconductor structures
#23 | 2021-09-23Extrinsic field termination structures for improving reliability of high-voltage, high-power active devices
#24 | 2021-07-01Heterolithic integrated circuits including integrated devices formed on semiconductor materials of different elemental composition
#25 | 2020-01-23III-nitride material semiconductor structures on conductive silicon substrates
#26 | 2020-01-16Heterolithic microwave integrated circuits including gallium-nitride devices on highly doped regions of intrinsic silicon
#27 | 2019-12-05Parasitic capacitance reduction in GaN-on-silicon devices
#28 | 2019-07-25Heterolithic microwave integrated circuits including gallium-nitride devices formed on highly doped semiconductor
#29 | 2019-07-25Heterolithic microwave integrated circuits including gallium-nitride devices on intrinsic semiconductor
#30 | 2018-10-25Device isolation design rules for HAST improvement
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