Hsinchu
Taiwan
23
2026-06-11
The entities that hold a legal rights for patent applications filed by inventor SINGH Gulbagh:
Gulbagh SINGH from Hsinchu, TW has applied for patents for these inventions. The list has both pending applications and granted patents:
METAL-INSULATOR-METAL (MIM) CAPACITOR AND METHOD OF MAKING SAME
#2 | 2025-11-13MEMORY DEVICE WITH IMPROVED DATA RETENTION
#3 | 2025-04-17SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
#4 | 2024-02-22METHOD OF MAKING SEMICONDUCTOR STRUCTURE INCLUDING BUFFER LAYER
#5 | 2023-11-23Semiconductor structure and method for manufacturing the same
#6 | 2023-01-12METAL-INSULATOR-METAL (MIM) CAPACITOR AND METHOD OF MAKING SAME
#7 | 2022-12-29MEMORY DEVICE WITH IMPROVED DATA RETENTION
#8 | 2022-08-04Semiconductor structure and method for manufacturing the same
#9 | 2022-06-30Semiconductor structure including buffer layer
#10 | 2021-10-21Structures and methods for noise isolation in semiconductor devices
#11 | 2021-10-21Semiconductor device with air-void in spacer
#12 | 2021-10-21Semiconductor wafer with devices having different top layer thicknesses
#13 | 2020-10-08Method of designing a layout, method of making a semiconductor structure and semiconductor structure
#14 | 2020-09-17Method for forming a bulk semiconductor substrate configured to exhibit soi behavior
#15 | 2020-08-06Isolation regions for reduced junction leakage
#16 | 2020-04-30Structures and methods for noise isolation in semiconductor devices
#17 | 2020-02-20Isolation regions for reduced junction leakage
#18 | 2020-01-02Bulk semiconductor substrate configured to exhibit semiconductor-on-insulator behavior
#19 | 2019-12-26Shallow trench isolation for integrated circuits
#20 | 2019-05-30Memory device with improved data retention
#21 | 2019-05-23Structures and methods for noise isolation in semiconductor devices
#22 | 2019-05-16Semiconductor device with post passivation structure
#23 | 2018-11-01Semiconductor device with post passivation structure and fabrication method therefor
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