Inventor profile of:

Steven DENBAARS

City:

Goleta, California

Country:

United States

Published Applications:

18

Last publication date:

2023-04-20

Top Assignees for applications by Steven DENBAARS

The entities that hold a legal rights for patent applications filed by inventor DENBAARS Steven:

Recent patent applications by DENBAARS Steven

Steven DENBAARS from Goleta, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2023-04-20
US20230123976A1
Electricity

METHOD AND STRUCTURE OF SINGLE CRYSTAL ELECTRONIC DEVICES WITH ENHANCED STRAIN INTERFACE REGIONS BY IMPURITY INTRODUCTION

#2 | 2022-02-10
US20220042672A1
Mechanical engineering

INFRARED ILLUMINATION DEVICE CONFIGURED WITH A GALLIUM AND NITROGEN CONTAINING LASER SOURCE

#3 | 2021-01-21
US20210018161A1
Mechanical engineering

Infrared illumination device configured with a gallium and nitrogen containing laser source

#4 | 2020-07-21
US16512903
Mechanical engineering

Infrared illumination device configured with a gallium and nitrogen containing laser source

#5 | 2020-04-16
US20200119715A1
Electricity

Method and structure for single crystal acoustic resonator devices using thermal recrystallization

#6 | 2019-08-22
US20190259934A1
Electricity

Method and structure of single crystal electronic devices with enhanced strain interface regions by impurity introduction

#7 | 2018-11-29
US20180342999A1
Electricity

Method and structure for single crystal acoustic resonator devices using thermal recrystallization

#8 | 2013-02-05
US10382198
-

Susceptor apparatus for inverted type MOCVD reactor

#9 | 2012-03-13
US10256814
-

Apparatus for inverted multi-wafer MOCVD fabrication

#10 | 2010-12-30
US20100330720A1
Electricity

Group-III nitride based laser diode and method for fabricating same

#11 | 2010-10-28
US20100273281A1
Electricity

Laser diode and method for fabricating same

#12 | 2009-06-18
US20090152565A1
Electricity

Pendeo epitaxial structures and devices

#13 | 2008-05-15
US20080112453A1
Electricity

Group-III nitride based laser diode and method for fabricating same

#14 | 2008-05-15
US20080112452A1
Electricity

Laser diode and method for fabricating same

#15 | 2006-11-30
US20060269390A1
Electricity

Susceptor for MOCVD reactor

#16 | 2006-10-17
US10144943
-

Susceptor for MOCVD reactor

#17 | 2006-03-09
US20060049411A1
Electricity

Method for fabricating group-III nitride devices and devices fabricated using method

#18 | 2005-11-10
US20050247950A1
Electricity

Lift-off process for GaN films formed on SiC substrates and devices fabricated using the method

InventorID:

2360989 ⎘