Benjamin P. Yonkee

City:

Goleta, California

Country:

United States

Published Applications:

Last publication date:

2022-06-09

Top Assignees for applications by Benjamin P. Yonkee

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Benjamin P. Yonkee from Goleta, US has applied for patents for these inventions. The list has both pending applications and granted patents:

HYBRID GROWTH METHOD FOR III-NITRIDE TUNNEL JUNCTION DEVICES

Contact architectures for tunnel junction devices

III-nitride light emitting diodes with tunnel junctions wafer bonded to a conductive oxide and having optically pumped layers

Methods for fabricating III-nitride tunnel junction devices

III-nitride tunnel junction light emitting diode with wall plug efficiency of over seventy percent

Hybrid growth method for III-nitride tunnel junction devices

III-nitride tunnel junction with modified P-N interface

InventorID:

2387504 ⎘