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Inventor profile of:

Yuichi OSHIMA

City:

Ibaraki

Country:

Japan

Published Applications:

Last publication date:

2026-06-18

Top Assignees for applications by Yuichi OSHIMA

The entities that hold a legal rights for patent applications filed by inventor OSHIMA Yuichi:

NATIONAL INSTITUTE FOR MATERIALS SCIENCE 4 Ibaraki, Japan
Hitachi Cable, Ltd. 3 Tokyo, Japan
FLOSFIA INC. 3 Kyoto, Japan
MITSUBISHI CHEMICAL CORPORATION 3 Tokyo, Japan
NEC Corporation 3 Tokyo, Japan
KYOTO UNIVERSITY 1 Kyoto, Japan
National Institute For Materials Science 1 Tsukuba-shi, Japan
SAGA UNIVERSITY 1 Saga, Japan

Recent patent applications by OSHIMA Yuichi

Yuichi OSHIMA from Ibaraki, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-06-18

US20260168134A1

Chemistry; metallurgy

GAN CRYSTAL AND METHOD FOR PRODUCING GAN CRYSTAL

#2 | 2025-06-19

US20250198052A1

Chemistry; metallurgy

GaN CRYSTAL AND METHOD FOR PRODUCING GaN CRYSTAL

#3 | 2022-06-16

US20220189769A1

Electricity

CRYSTAL FILM, SEMICONDUCTOR DEVICE INCLUDING CRYSTAL FILM, AND METHOD OF PRODUCING CRYSTAL FILM

#4 | 2021-12-09

US20210384336A1

Electricity

GAN CRYSTAL AND SUBSTRATE

#5 | 2021-10-28

US20210335995A1

Electricity

Crystalline multilayer structure, semiconductor device, and method of manufacturing crystalline structure

#6 | 2021-10-28

US20210335609A1

Electricity

Crystalline film containing a crystalline metal oxide and method for manufacturing the same under partial pressure

#7 | 2019-02-21

US20190057866A1

Electricity

CRYSTAL, CRYSTALLINE FILM, SEMICONDUCTOR DEVICE INCLUDING CRYSTALLINE FILM, AND METHOD FOR PRODUCING CRYSTALLINE FILM

#8 | 2019-02-21

US20190057865A1

Electricity

Crystalline film, semiconductor device including crystalline film, and method for producing crystalline film

#9 | 2019-02-21

US20190055667A1

Chemistry; metallurgy

METHOD FOR PRODUCING CRYSTALLINE FILM

#10 | 2019-02-21

US20190055646A1

Chemistry; metallurgy

METHOD FOR PRODUCING CRYSTALLINE FILM

#11 | 2006-03-02

US20060046325A1

Electricity

Group III nitride semiconductor substrate and its manufacturing method

#12 | 2005-08-02

US10105404

Semiconductor substrate made of group III nitride, and process for manufacture thereof

#13 | 2005-02-10

US20050029507A1

Chemistry; metallurgy

Epitaxially grown nitride-based compound semiconductor crystal substrate structure with low dislocation density

InventorID:

2434450 ⎘