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Inventor profile of:

Yusuke KOBAYASHI

City:

Tsukuba

Country:

Japan

Published Applications:

Last publication date:

2021-04-01

Top Assignees for applications by Yusuke KOBAYASHI

The entities that hold a legal rights for patent applications filed by inventor KOBAYASHI Yusuke:

FUJI ELECTRIC CO., LTD. 23 Kawasaki-shi, Japan
FUJI ELECTRIC CO., LTD. 15 Kawasaki-shi, Kanagawa, Japan
FUJI ELECTRIC CO., LTD. 10 Kawasaki, Japan
National Institute of Advanced Industrial Science and Technology 3 Tokyo, Japan
NATIONAL INSTITUTE ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY 1 TOKYO, Japan
SUMITOMO ELECTRIC INDUSTRIES, LTD. 1 Osaka, Japan
Sumitomo Electric Industries, Ltd. 1 Osaka-shi, Osaka, Japan
TANAKA KIKINZOKU KOGYO K.K. 1 Tokyo, Japan

Recent patent applications by KOBAYASHI Yusuke

Yusuke KOBAYASHI from Tsukuba, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2021-04-01

US20210098621A1

Electricity

Semiconductor device

#2 | 2019-09-12

US20190280118A1

Electricity

Semiconductor device

#3 | 2019-05-30

US20190165164A1

Electricity

Semiconductor device

#4 | 2019-05-30

US20190165163A1

Electricity

Semiconductor device having semiconductor regions with an interval therebetween in a gate pad region

#5 | 2019-05-30

US20190165162A1

Electricity

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

#6 | 2019-04-11

US20190109228A1

Electricity

Semiconductor device having a schottky barrier diode

#7 | 2019-04-11

US20190109227A1

Electricity

Semiconductor device

#8 | 2019-03-07

US20190074373A1

Electricity

Semiconductor device

#9 | 2019-03-07

US20190074372A1

Electricity

Semiconductor device and method of manufacturing a semiconductor device

#10 | 2019-01-31

US20190035927A1

Electricity

Semiconductor device having trenches in termination structure region thereof and method for manufacturing the same

#11 | 2018-12-13

US20180358445A1

Electricity

Semiconductor device having a gate electrode, an interlayer insulating film and a barrier metal provided in a trench

#12 | 2018-12-13

US20180358430A1

Electricity

Silicon carbide semiconductor device and method of manufacturing a silicon carbide semiconductor device

#13 | 2018-10-25

US20180308975A1

Electricity

Semiconductor device and method of manufacturing semiconductor device

#14 | 2018-07-19

US20180204905A1

Electricity

Semiconductor device having a trench structure

#15 | 2018-06-28

US20180182886A1

Electricity

Semiconductor device and method of manufacturing semiconductor device

#16 | 2018-06-28

US20180182885A1

Electricity

Semiconductor device and method of manufacturing thereof

#17 | 2018-06-28

US20180182884A1

Electricity

Semiconductor device and method of manufacturing the semiconductor device

#18 | 2018-06-28

US20180182847A1

Electricity

Semiconductor device and method of manufacturing semiconductor device

#19 | 2018-06-21

US20180175147A1

Electricity

Silicon carbide semiconductor device and method of manufacturing the silicon carbide semiconductor device

#20 | 2018-06-07

US20180158939A1

Electricity

Method of manufacturing a semiconductor device having two types of gate electrodes

#21 | 2018-02-08

US20180040698A1

Electricity

Silicon carbide based power semiconductor device with low on voltage and high speed characteristics

#22 | 2018-02-08

US20180040690A1

Electricity

Semiconductor device and method of manufacturing semiconductor device

#23 | 2018-02-08

US20180040687A1

Electricity

Semiconductor device and method of manufacturing semiconductor device

#24 | 2017-08-17

US20170236927A1

Electricity

Semiconductor device and method of manufacturing semiconductor device

#25 | 2017-04-20

US20170110571A1

Electricity

Semiconductor device and method of manufacturing semiconductor device

#26 | 2016-12-15

US20160365434A1

Electricity

Semiconductor device having first and second gate electrodes

#27 | 2015-07-30

US20150211109A1

Chemistry; metallurgy

Target for magnetron sputtering

InventorID:

2449730 ⎘