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Inventor profile of:

Xiaoxin XU

City:

Beijing

Country:

China

Published Applications:

20

Last publication date:

2026-06-18

Top Assignees for applications by Xiaoxin XU

The entities that hold a legal rights for patent applications filed by inventor XU Xiaoxin:

Institute of Microelectronics. Chinese Academy of Sciences 11 Beijing, China
INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES 2 BEIJING, China
THE INSTITUTE OF MICROELECTRONICS OF CHINESE ACADEMY OF SCIENCES 1 Beijing, China

Recent patent applications by XU Xiaoxin

Xiaoxin XU from Beijing, CN has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-06-18

US20260170297A9

RESERVOIR COMPUTING NETWORK OPTIMIZATION METHOD AND RELATED APPARATUS

#2 | 2026-03-26

US20260086142A1

METHOD AND APPARATUS OF PREDICTING ENDURANCE OF CHIP, MEDIUM, AND ELECTRONIC DEVICE

#3 | 2026-01-22

US20260024608A1

SERVICE LIFE PREDICTION AND REPAIR METHOD FOR RESISTIVE RANDOM ACCESS MEMORY CHIP

#4 | 2025-08-21

US20250266089A1

METHOD FOR OPERATING MEMORY CELL AND RESISTIVE RANDOM ACCESS MEMORY, AND ELECTRONIC DEVICE

#5 | 2024-08-01

US20240260488A1

METHOD FOR PREPARING RESERVOIR ELEMENT

#6 | 2024-04-18

US20240130251A1

THREE-DIMENSIONAL RESERVOIR BASED ON VOLATILE THREE-DIMENSIONAL MEMRISTOR AND MANUFACTURING METHOD THEREFOR

#7 | 2024-04-11

US20240122075A1

ACTIVATION FUNCTION GENERATOR BASED ON MAGNETIC DOMAIN WALL DRIVEN MAGNETIC TUNNEL JUNCTION AND MANUFACTURING METHOD

#8 | 2024-01-18

US20240023469A1

RESISTIVE RANDOM ACCESS MEMORY AND METHOD OF PREPARING THE SAME

#9 | 2023-11-16

US20230368838A1

Memory circuit structure and method of operating memory circuit structure

#10 | 2023-06-22

US20230197152A1

MEMORY CELL STRUCTURE, MEMORY ARRAY STRUCTURE, AND VOLTAGE BIASING METHOD

#11 | 2023-04-20

US20230124011A1

Reconfigurable PUF device based on fully electric field-controlled domain wall motion

#12 | 2022-06-02

US20220172035A1

Neural network operation device

#13 | 2022-04-21

US20220122997A1

MEMORY

#14 | 2022-04-14

US20220115052A1

Writing method and erasing method of fusion memory

#15 | 2022-03-24

US20220093150A1

Fusion memory

#16 | 2021-09-23

US20210296579A1

RESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR PREPARING THE SAME

#17 | 2020-06-04

US20200176674A1

1S1R memory integrated structure with larger selector surface area which can effectively suppress leakage current in the cross array without increasing the overall size of the integrated structure and method for fabricating the same

#18 | 2020-02-20

US20200058704A1

SELECTOR BASED ON TRANSITION METAL OXIDE AND PREPARATION METHOD THEREFOR

#19 | 2019-04-18

US20190115529A1

Selection device for use in bipolar resistive memory and manufacturing method therefor

#20 | 2019-03-14

US20190081237A1

Self-gating resistive storage device having resistance transition layer in vertical trench in stacked structure of insulating dielectric layers and electrodes

InventorID:

2455438 ⎘