Inventor profile of:

Andreas KLIPP

City:

Ludwigshafen

Country:

Germany

Published Applications:

15

Last publication date:

2024-08-22

Top Assignees for applications by Andreas KLIPP

The entities that hold a legal rights for patent applications filed by inventor KLIPP Andreas:

  • BASF SE 11 Ludwigshafen am Rhein, Germany

Recent patent applications by KLIPP Andreas

Andreas KLIPP from Ludwigshafen, DE has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2024-08-22
US20240282584A1
Electricity

USE OF A COMPOSITION AND A PROCESS FOR SELECTIVELY ETCHING SILICON

#2 | 2024-03-21
US20240093089A1
Chemistry; metallurgy

COMPOSITION AND PROCESS FOR SELECTIVELY ETCHING A LAYER COMPRISING AN ALUMINIUM COMPOUND IN THE PRESENCE OF LAYERS OF LOW-K MATERIALS, COPPER AND/OR COBALT

#3 | 2023-10-26
US20230340370A1
Chemistry; metallurgy

Composition, Its Use And A Process For Removing Post-Etch Residues

#4 | 2023-10-12
US20230326759A1
Electricity

Composition, Its Use And A Process For Selectively Etching Silicon-Germanium Material

#5 | 2023-08-31
US20230274930A1
Electricity

Composition Comprising a Siloxane and an Alkane for Avoiding Pattern Collapse When Treating Patterned Materials with Line-Space Dimensions of 50 NM or Below

#6 | 2023-07-27
US20230235252A1
Chemistry; metallurgy

Use of a Composition Consisting of Ammonia and an Alkanol for Avoiding Pattern Collapse When Treating Patterned Materials with Line-Space Dimensions of 50 NM or Below

#7 | 2023-06-01
US20230167381A1
Chemistry; metallurgy

Composition comprising a primary and a secondary surfactant, for cleaning or rinsing a product

#8 | 2022-07-14
US20220220421A1
Chemistry; metallurgy

COMPOSITION AND PROCESS FOR ELECTIVELY ETCHING A HARD MASK AND/OR AN ETCH-STOP LAYER IN THE PRESENCE OF LAYERS OF LOW-K MATERIALS, COPPER, COBALT AND/OR TUNGSTEN

#9 | 2022-06-02
US20220169956A1
Chemistry; metallurgy

COMPOSITION COMPRISING AN AMMONIA-ACTIVATED SILOXANE FOR AVOIDING PATTERN COLLAPSE WHEN TREATING PATTERNED MATERIALS WITH LINE-SPACE DIMENSIONS OF 50 NM OR BELOW

#10 | 2021-09-30
US20210301221A1
Chemistry; metallurgy

Cleaning composition for post-etch or post ash residue removal from a semiconductor substrate and corresponding manufacturing process

#11 | 2021-06-24
US20210189298A1
Chemistry; metallurgy

Imidazolidinethione-containing compositions for post-ash residue removal and/or for oxidative etching of a layer or mask comprising TiN

#12 | 2021-06-03
US20210166934A1
Electricity

Cleavable additives for use in a method of making a semiconductor substrate

#13 | 2020-10-29
US20200339523A1
Chemistry; metallurgy

COMPOSITION AND PROCESS FOR SELECTIVELY ETCHING A LAYER COMPRISING AN ALUMINIUM COMPOUND IN THE PRESENCE OF LAYERS OF LOW-K MATERIALS, COPPER AND/OR COBALT

#14 | 2020-08-13
US20200255772A1
Chemistry; metallurgy

Use of compositions comprising a siloxane-type additive for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below

#15 | 2019-05-16
US20190144781A1
Chemistry; metallurgy

Composition for post chemical-mechanical-polishing cleaning

InventorID:

2501319 ⎘