Inventor profile of:

Peng Wang

City:

Hsinchu

Country:

Taiwan

Published Applications:

34

Last publication date:

2026-05-14

Top Assignees for applications by Peng Wang

The entities that hold a legal rights for patent applications filed by inventor Wang Peng:

Recent patent applications by Wang Peng

Peng Wang from Hsinchu, TW has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-05-14
US20260136645A1
Electricity

METAL GATE STRUCTURE CUTTING PROCESS

#2 | 2026-05-14
US20260136585A1
Electricity

TRANSISTOR DEVICE WITH TAPERED GATE CONTACT PROFILE

#3 | 2025-11-27
US20250364327A1
Electricity

INTEGRATED CIRCUIT STRUCTURE AND MANUFACTURING METHOD THEREOF

#4 | 2025-11-27
US20250364323A1
Electricity

INTEGRATED CIRCUIT STRUCTURE AND MANUFACTURING METHOD THEREOF

#5 | 2025-11-20
US20250359293A1
Electricity

ETCH PROFILE CONTROL OF VIA OPENING

#6 | 2024-11-14
US20240379762A1
Electricity

EPITAXIAL SOURCE/DRAIN STRUCTURE AND METHOD

#7 | 2024-10-31
US20240363749A1
Electricity

Asymmetric Source and Drain Structures in Semiconductor Devices

#8 | 2024-10-31
US20240363408A1
Electricity

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE

#9 | 2024-10-03
US20240332063A1
Electricity

DEVICE WITH CONTROLLED GATE CONTACT PROFILE

#10 | 2024-08-08
US20240266218A1
Electricity

INTEGRATED CIRCUIT STRUCTURE AND MANUFACTURING METHOD THEREOF

#11 | 2024-03-07
US20240079409A1
Electricity

SEMICONDUCTOR DEVICE STRUCTURE WITH CONDUCTIVE VIA STRUCTURE

#12 | 2024-01-25
US20240030070A1
Electricity

ETCH PROFILE CONTROL OF VIA OPENING

#13 | 2023-11-23
US20230378270A1
Electricity

Epitaxial source/drain structure and method

#14 | 2023-11-02
US20230352345A1
Electricity

METAL GATE STRUCTURE CUTTING PROCESS

#15 | 2023-10-19
US20230335435A1
Electricity

INTEGRATED CIRCUIT STRUCTURE AND MANUFACTURING METHOD THEREOF

#16 | 2023-10-12
US20230326978A1
Electricity

ETCH PROFILE CONTROL OF GATE CONTACT OPENING

#17 | 2023-06-15
US20230187270A1
Electricity

Etch profile control of gate contact opening

#18 | 2023-02-16
US20230047598A1
Electricity

Semiconductor devices and methods of manufacture

#19 | 2022-12-22
US20220406777A1
Electricity

Semiconductor device structure with conductive via structure and method for forming the same

#20 | 2022-04-28
US20220130961A1
Electricity

Epitaxial source/drain structure and method

#21 | 2022-03-31
US20220102507A1
Electricity

Etch profile control of gate contact opening

#22 | 2022-03-31
US20220102219A1
Electricity

Etch profile control of via opening

#23 | 2022-03-31
US20220102211A1
Electricity

Integrated circuit structure and manufacturing method thereof

#24 | 2022-03-31
US20220102204A1
Electricity

Integrated circuit structure and manufacturing method thereof

#25 | 2022-03-31
US20220102199A1
Electricity

Etch profile control of gate contact opening

#26 | 2021-09-23
US20210296497A1
Electricity

Asymmetric source and drain structures in semiconductor devices

#27 | 2021-06-10
US20210175126A1
Electricity

Metal gate structure cutting process

#28 | 2020-06-11
US20200185278A1
Electricity

Selective NFET/PFET recess of source/drain regions

#29 | 2020-04-30
US20200135546A1
Electricity

Method for shrinking openings in forming integrated circuits

#30 | 2020-03-05
US20200075725A1
Electricity

Epitaxial source/drain structure and method

#31 | 2020-03-05
US20200075421A1
Electricity

Metal gate structure cutting process

#32 | 2020-01-02
US20200006556A1
Electricity

Asymmetric source and drain structures in semiconductor devices

#33 | 2019-10-31
US20190333820A1
Electricity

Selective NFET/PFET recess of source/drain regions

#34 | 2019-05-30
US20190165171A1
Electricity

Asymmetric source and drain structures in semiconductor devices

InventorID:

2517753 ⎘