Inventor profile of:

Zihui Wang

City:

Mountain View, California

Country:

United States

Published Applications:

19

Last publication date:

2025-08-07

Top Assignees for applications by Zihui Wang

The entities that hold a legal rights for patent applications filed by inventor Wang Zihui:

Recent patent applications by Wang Zihui

Zihui Wang from Mountain View, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2025-08-07
US20250254891A1
Electricity

Nonvolatile Memory Device Including Dual Memory Layers

#2 | 2025-08-05
US19087510
Electricity

Nonvolatile memory device including dual memory layers

#3 | 2025-04-15
US18542672
Electricity

Shielding of packaged magnetic random access memory

#4 | 2025-02-20
US20250063952A1
Electricity

Magnetic Memory Element Including Perpendicular Enhancement Layer and Oxide Cap Layer

#5 | 2024-08-08
US20240268125A1
Electricity

Nonvolatile memory device including dual memory layers

#6 | 2024-01-11
US20240015986A1
Electricity

Memory Cell Including Two Selectors and Method of Making Same

#7 | 2023-12-21
US20230413577A1
Electricity

Multilayered seed for perpendicular magnetic structure including an oxide layer

#8 | 2023-12-14
US20230403945A1
Electricity

Magnetic memory element including perpendicular enhancement layers and dual oxide cap layers

#9 | 2022-12-01
US20220383920A9
Physics

Cross-point MRAM including self-compliance selector

#10 | 2022-11-24
US20220376172A1
Electricity

Magnetic memory element incorporating dual perpendicular enhancement layers

#11 | 2022-09-15
US20220293677A1
Electricity

Multilayered seed for perpendicular magnetic structure including an oxide layer

#12 | 2021-10-07
US20210312964A1
Physics

Cross-Point MRAM Including Self-Compliance Selector

#13 | 2021-06-03
US20210167126A1
Electricity

Multilayered seed for perpendicular magnetic structure

#14 | 2021-05-27
US20210159399A1
Electricity

Magnetic memory element incorporating dual perpendicular enhancement layers

#15 | 2020-10-01
US20200312905A1
Electricity

Multilayered seed for perpendicular magnetic structure

#16 | 2020-07-16
US20200227628A1
Electricity

Magnetic memory element incorporating perpendicular enhancement layer

#17 | 2020-02-06
US20200043981A1
Electricity

Multilayered seed structure for magnetic memory element including a CoFeB seed layer

#18 | 2019-06-27
US20190198752A1
Electricity

Magnetic memory element including magnesium perpendicular enhancement layer

#19 | 2019-06-27
US20190198566A1
Electricity

Multilayered seed structure for magnetic memory element including a CoFeB seed layer

InventorID:

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