Inventor profile of:

Yoichiro Mitani

City:

Tokyo

Country:

Japan

Published Applications:

13

Last publication date:

2020-10-08

Top Assignees for applications by Yoichiro Mitani

The entities that hold a legal rights for patent applications filed by inventor Mitani Yoichiro:

Recent patent applications by Mitani Yoichiro

Yoichiro Mitani from Tokyo, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2020-10-08
US20200321437A1
Electricity

SILICON CARBIDE EPITAXIAL WAFER, METHOD FOR MANUFACTURING SILICON CARBIDE EPITAXIAL WAFER, AND POWER CONVERTER

#2 | 2020-09-03
US20200279922A1
Electricity

SiC epitaxial wafer, semiconductor device, and power converter

#3 | 2020-05-07
US20200144053A1
Electricity

Semiconductor wafer, semiconductor device, and method for producing semiconductor device

#4 | 2020-02-27
US20200066847A1
Electricity

SiC epitaxial wafer and manufacturing method of the same

#5 | 2020-01-16
US20200020528A1
Electricity

SiC epitaxial wafer, method for manufacturing SiC epitaxial wafer, SiC device, and power conversion apparatus

#6 | 2019-05-16
US20190145021A1
Chemistry; metallurgy

Silicon carbide epitaxial substrate and silicon carbide semiconductor device

#7 | 2017-02-09
US20170040166A1
Electricity

Manufacturing method and apparatus for manufacturing silicon carbide epitaxial wafer

#8 | 2016-10-13
US20160298264A1
Chemistry; metallurgy

Single-crystal 4H-SiC substrate

#9 | 2016-10-13
US20160298262A1
Chemistry; metallurgy

Method for manufacturing a single-crystal 4Hβ€”SiC substrate

#10 | 2015-12-10
US20150354090A1
Chemistry; metallurgy

Method for manufacturing SiC epitaxial wafer

#11 | 2015-09-24
US20150267320A1
Chemistry; metallurgy

Method for manufacturing silicon carbide semiconductor device

#12 | 2014-10-02
US20140295136A1
Chemistry; metallurgy

Single-crystal 4H-SiC substrate

#13 | 2013-05-23
US20130126906A1
Electricity

Method of manufacturing silicon carbide epitaxial wafer

InventorID:

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