Milpitas, California
United States
25
2013-05-23
The entities that hold a legal rights for patent applications filed by inventor Bulucea Constantin:
Constantin Bulucea from Milpitas, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Semiconductor architecture having field-effect transistors especially suitable for analog applications
#2 | 2012-11-29Semiconductor architecture having field-effect transistors especially suitable for analog applications
#3 | 2012-11-01Structure and Fabrication of Field-effect Transistor for Alleviating Short-channel Effects and/or Reducing Junction Capacitance
#4 | 2012-07-19Structure and Fabrication of Field-effect Transistor for Alleviating Short-channel Effects and/or Reducing Junction Capacitance
#5 | 2012-07-19Structure and Fabrication of Field-effect Transistor for Alleviating Short-channel Effects and/or Reducing Junction Capacitance
#6 | 2012-04-03Structure and fabrication of insulated-gate field-effect transistor with hypoabrupt change in body dopant concentration below source/drain zone
#7 | 2012-03-06Fabrication of field-effect transistor with vertical body-material dopant profile tailored to alleviate punchthrough and reduce current leakage
#8 | 2011-09-06Semiconductor architecture having field-effect transistors especially suitable for analog applications
#9 | 2011-02-01Fabrication of field-effect transistor with reduced junction capacitance and threshold voltage of magnitude that decreases with increasing channel length
#10 | 2011-01-04Semiconductor structure utilizing empty and filled wells
#11 | 2010-11-23Insulated-gate field-effect transistor with hypoabrupt step change in body dopant concentration below source/drain zone
#12 | 2010-08-31Fabrication of complementary field-effect transistors with vertical body-material dopant profiles tailored to alleviate punchthrough and reduce current leakage
#13 | 2010-04-20Structure and fabrication of field-effect transistor for alleviating short-channel effects
#14 | 2010-04-20Semiconductor structure in which like-polarity insulated-gate field-effect transistors have multiple vertical body dopant concentration maxima and different halo pocket characteristics
#15 | 2009-09-29Fabrication of like-polarity insulated-gate field-effect transistors having multiple vertical body dopant concentration maxima and different halo pocket characteristics
#16 | 2009-09-29Fabrication of semiconductor structure having N-channel channel-junction field-effect transistor
#17 | 2009-08-25Gate-enhanced junction varactor
#18 | 2008-12-18Semiconductor architecture having field-effect transistors especially suitable for analog applications
#19 | 2008-09-02Fabrication of semiconductor structure in which complementary field-effect transistors each have hypoabrupt body dopant distribution below at least one source/drain zone
#20 | 2007-06-26Gate-enhanced junction varactor
#21 | 2007-02-13Configuration and fabrication of semiconductor structure having n-channel channel-junction field-effect transistor
#22 | 2006-12-05P-channel field-effect transistor with reduced junction capacitance
#23 | 2006-07-25Gate-enhanced junction varactor with gradual capacitance variation
#24 | 2006-07-18Design and operation of gate-enhanced junction varactor with gradual capacitance variation
#25 | 2006-06-27Integration of trench power transistors into a 1.5 Ξm BCD process
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