Inventor profile of:

Timothy A. Quick

City:

Boise, Idaho

Country:

United States

Published Applications:

75

Last publication date:

2025-10-16

Top Assignees for applications by Timothy A. Quick

The entities that hold a legal rights for patent applications filed by inventor Quick Timothy A.:

Recent patent applications by Quick Timothy A.

Timothy A. Quick from Boise, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2025-10-16
US20250320600A1
Chemistry; metallurgy

FORMING AN INDIUM CHALCOGENIDE FILM

#2 | 2025-08-28
US20250275491A1
Electricity

Three-Dimensional Structure of Polarity Memory Chalcogenide

#3 | 2025-02-20
US20250059646A1
Chemistry; metallurgy

METHODS FOR DEPOSITING GERMANIUM FILMS BY ATOMIC LAYER DEPOSITION

#4 | 2024-12-26
US20240425983A1
Chemistry; metallurgy

METHODS FOR DEPOSITING SILICON FILMS BY ATOMIC LAYER DEPOSITION

#5 | 2022-10-27
US20220344451A1
Electricity

Dielectric materials, capacitors and memory arrays

#6 | 2022-09-29
US20220310637A1
Electricity

Integrated assemblies and methods of forming integrated assemblies

#7 | 2022-07-28
US20220238340A1
Electricity

Methods for inhibiting line bending during conductive material deposition, and related apparatus

#8 | 2021-07-29
US20210233810A1
Electricity

Apparatus with species on or in conductive material on elongate lines

#9 | 2021-07-15
US20210217611A1
Electricity

Methods of forming silicon nitride including plasma exposure

#10 | 2020-07-23
US20200235004A1
Electricity

Methods of forming an apparatus for making semiconductor dieves

#11 | 2019-04-18
US20190115252A1
Electricity

Methods of forming a semiconductor device using block copolymer materials

#12 | 2019-02-14
US20190051823A1
Electricity

Memory cells, semiconductor devices including the memory cells, and methods of operation

#13 | 2018-07-12
US20180198063A1
Electricity

Memory cells, semiconductor devices including the memory cells, and methods of operation

#14 | 2018-07-12
US20180197735A1
Electricity

Silicon chalcogenate precursors comprising a chemical formula of si(XR1)nR24-n and methods of forming the silicon chalcogenate precursors

#15 | 2018-05-24
US20180144927A1
Electricity

Methods of forming semiconductor devices comprising silicon nitride on high aspect ratio features

#16 | 2018-01-25
US20180025906A1
Electricity

Silicon chalcogenate precursors, methods of forming the silicon chalcogenate precursors, and related methods of forming silicon nitride and semiconductor structures

#17 | 2018-01-09
US15235365
Electricity

Methods of forming silicon nitride by atomic layer deposition and methods of forming semiconductor structures

#18 | 2016-08-18
US20160240587A1
Electricity

Horizontally oriented and vertically stacked memory cells

#19 | 2016-07-28
US20160218032A1
Electricity

Methods of forming a nanostructured polymer material including block copolymer materials

#20 | 2016-06-09
US20160163536A1
Electricity

Methods of forming semiconductor device structures including metal oxide structures

#21 | 2015-08-06
US20150221866A1
Electricity

Horizontally oriented and vertically stacked memory cells

#22 | 2015-07-30
US20150214477A1
Electricity

Memory cells and methods of fabrication

#23 | 2014-10-16
US20140308776A1
Electricity

Methods of depositing phase change materials and methods of forming memory

#24 | 2014-08-14
US20140227863A1
Electricity

Methods of forming a metal telluride material, related methods of forming a semiconductor device structure, and related semiconductor device structures

#25 | 2014-06-05
US20140151843A1
Electricity

Semiconductor device structures including metal oxide structures

#26 | 2014-05-29
US20140145138A1
Electricity

Resistive random access memory devices, and related semiconductor device structures

#27 | 2014-04-17
US20140107296A1
Chemistry; metallurgy

Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference

#28 | 2014-03-13
US20140073084A1
Electricity

Methods of forming phase change materials and methods of forming phase change memory circuitry

#29 | 2014-01-30
US20140027775A1
Electricity

Methods of forming a metal chalcogenide material

#30 | 2014-01-23
US20140021437A1
Electricity

Resistance variable memory cell structures and methods

#31 | 2013-11-07
US20130295717A1
Electricity

Methods of depositing antimony-comprising phase change material onto a substrate and methods of forming phase change memory circuitry

#32 | 2013-09-26
US20130252396A1
Electricity

Confined resistance variable memory cell structures and methods

#33 | 2013-06-20
US20130153853A1
Electricity

Horizontally oriented and vertically stacked memory cells

#34 | 2013-05-23
US20130128649A1
Electricity

Memory cells, semiconductor devices including such cells, and methods of fabrication

#35 | 2012-11-29
US20120298158A1
Performing operations; transporting

MICROELECTRONIC SUBSTRATE CLEANING SYSTEMS WITH POLYELECTROLYTE AND ASSOCIATED METHODS

#36 | 2012-09-13
US20120231579A1
Electricity

Methods of depositing antimony-comprising phase change material onto a substrate and methods of forming phase change memory circuitry

#37 | 2012-07-12
US20120178209A1
Chemistry; metallurgy

Methods of forming metal-containing structures, and methods of forming germanium-containing structures

#38 | 2012-06-14
US20120149146A1
Electricity

CONFINED RESISTANCE VARIABLE MEMORY CELL STRUCTURES AND METHODS

#39 | 2012-05-31
US20120133017A1
Electricity

Semiconductor structures including polymer material permeated with metal oxide

#40 | 2012-05-03
US20120104347A1
Electricity

Method of forming a chalcogenide material and methods of forming a resistive random access memory device including a chalcogenide material

#41 | 2012-04-26
US20120097911A1
Electricity

Phase change memory cell structures and methods

#42 | 2012-03-22
US20120067283A1
Electricity

Systems and Methods for Forming Metal Oxide Layers

#43 | 2012-01-26
US20120021587A1
Electricity

Systems and methods for forming metal oxide layers

#44 | 2012-01-26
US20120018693A1
Electricity

Confined resistance variable memory cell structures and methods

#45 | 2011-12-22
US20110309319A1
Electricity

Horizontally oriented and vertically stacked memory cells

#46 | 2011-12-08
US20110301383A1
Chemistry; metallurgy

Beta-diketiminate ligand sources and metal-containing compounds thereof, and systems and methods including same

#47 | 2011-12-01
US20110291065A1
Electricity

Phase change memory cell structures and methods

#48 | 2011-12-01
US20110291064A1
Electricity

Resistance variable memory cell structures and methods

#49 | 2011-11-17
US20110281414A1
Electricity

Semiconductor processing

#50 | 2011-03-24
US20110071316A1
Electricity

Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same

#51 | 2010-10-21
US20100267220A1
Electricity

Methods of depositing antimony-comprising phase change material onto a substrate and methods of forming phase change memory circuitry

#52 | 2010-10-21
US20100267195A1
Electricity

Methods of forming phase change materials and methods of forming phase change memory circuitry

#53 | 2010-10-07
US20100255653A1
Electricity

Semiconductor processing

#54 | 2010-07-29
US20100186668A1
Electricity

Atomic layer deposition systems and methods including metal beta-diketiminate compounds

#55 | 2010-06-17
US20100147218A1
Electricity

Systems and methods for forming metal oxide layers

#56 | 2010-05-20
US20100124609A1
Chemistry; metallurgy

Methods of forming metal-containing structures, and methods of forming germanium-containing structures

#57 | 2010-04-29
US20100102415A1
Electricity

Method for selectively permeating a self-assembled block copolymer, method for forming metal oxide structures, method for forming a metal oxide pattern, and method for patterning a semiconductor structure

#58 | 2010-02-25
US20100043824A1
Performing operations; transporting

Microelectronic substrate cleaning systems with polyelectrolyte and associated methods

#59 | 2009-11-05
US20090275199A1
Electricity

Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same

#60 | 2009-06-11
US20090149033A1
Electricity

Systems and methods for forming metal oxide layers

#61 | 2009-03-19
US20090075488A1
Chemistry; metallurgy

β-diketiminate ligand sources and metal-containing compounds thereof, and systems and methods including same

#62 | 2009-02-12
US20090042406A1
Electricity

Systems and methods for forming metal oxides using metal compounds containing aminosilane ligands

#63 | 2008-11-13
US20080280455A1
Electricity

Atomic layer deposition systems and methods including metal β-diketiminate compounds

#64 | 2008-09-18
US20080227303A1
Electricity

Systems and methods for forming tantalum oxide layers and tantalum precursor compounds

#65 | 2008-09-04
US20080214001A9
Electricity

Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same

#66 | 2007-07-05
US20070155190A1
Electricity

Deposition methods for forming silicon oxide layers

#67 | 2006-12-28
US20060292873A1
Electricity

Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same

#68 | 2006-12-28
US20060292841A1
Electricity

Atomic layer deposition systems and methods including metal beta-diketiminate compounds

#69 | 2006-12-28
US20060292303A1
Chemistry; metallurgy

Beta-diketiminate ligand sources and metal-containing compounds thereof, and systems and methods including same

#70 | 2006-11-16
US20060258175A1
Electricity

Systems and methods for forming metal oxides using metal compounds containing aminosilane ligands

#71 | 2006-11-09
US20060252244A1
Electricity

Systems and methods for forming metal oxide layers

#72 | 2006-10-03
US10425514
-

Systems and method for forming silicon oxide layers

#73 | 2006-08-08
US10229841
-

Systems and methods for forming metal oxides using metal compounds containing aminosilane ligands

#74 | 2006-04-18
US10230243
-

Systems and methods for forming tantalum oxide layers and tantalum precursor compounds

#75 | 2005-01-27
US20050019978A1
Electricity

Systems and methods for forming tantalum oxide layers and tantalum precursor compounds

InventorID:

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