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Inventor profile of:

Wei HE

City:

Suzhou

Country:

China

Published Applications:

Last publication date:

2020-12-03

Top Assignees for applications by Wei HE

The entities that hold a legal rights for patent applications filed by inventor HE Wei:

Suzhou Han Hua Semiconductor Co.,Ltd 7 Suzhou, China
SUZHOU HAN HUA SEMICONDUCTOR CO., LTD. 5 Suzhou, Jiangsu, China
SUZHOU HAN HUA SEMICONDUCTOR CO., LTD. 4 Suzhou, China
SUZHOU HAN HUA SEMICONDUCTOR CO., LTD. 4 Jiangsu, China
SUZHOU HANHUA SEMICONDUCTOR CO., LTD. 1 Suzhou, China
CENTEC NETWORKS (SU ZHOU) CO., LTD. 1 Jiangsu, China
CENTEC NETWORKS (SU ZHOU) CO., LTD. 1 Suzhou, China

Recent patent applications by HE Wei

Wei HE from Suzhou, CN has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2020-12-03

US20200381543A1

Electricity

Integrated enhancement/depletion mode HEMT and method for manufacturing the same

#2 | 2020-12-03

US20200381533A1

Electricity

Integrated enhancement/depletion mode HEMT

#3 | 2020-06-25

US20200203506A1

Electricity

Semiconductor device and method for manufacturing the same

#4 | 2020-02-13

US20200052102A1

Electricity

Group III-nitride semiconductor device and corresponding fabricating method

#5 | 2020-02-13

US20200052076A1

Electricity

Method for forming III-nitride semiconductor device and the III-nitride semiconductor device

#6 | 2019-12-26

US20190393090A1

Electricity

Method for recovering carbon-face-polarized silicon carbide substrate

#7 | 2019-12-05

US20190371598A1

Electricity

Fabrication of group III-nitride semiconductor devices

#8 | 2019-10-31

US20190333766A1

Electricity

Method of fabricating semiconductor structure

#9 | 2019-10-03

US20190304772A1

Electricity

Method for fabricating high-quality and high-uniformity III-nitride epi structure

#10 | 2019-08-29

US20190267470A1

Electricity

Method for manufacturing nitrogen-face polarity gallium nitride epitaxial structure

#11 | 2019-08-29

US20190267469A1

Electricity

Method for manufacturing an integrated enhancement/depletion mode HEMT

#12 | 2019-08-29

US20190267468A1

Electricity

Semiconductor device and method for manufacturing the same

#13 | 2019-08-22

US20190260494A1

Electricity

Method and system for accurate IPG compensation of USXGMII multi-channel

#14 | 2019-08-22

US20190259865A1

Electricity

Integrated enhancement/depletion mode HEMT and method for manufacturing the same

InventorID:

2594086 ⎘