Allan Ward

Metallization structure for high power microelectronic devices

Schottky diodes containing high barrier metal islands in a low barrier metal layer and methods of forming the same

Transistors having implanted channels and implanted P-type regions beneath the source region

Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices

Transistors having implanted channel layers and methods of fabricating the same

Reduced leakage power devices by inversion layer surface passivation

Environmentally robust passivation structures for high-voltage silicon carbide semiconductor devices

Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides

Edge termination structures for silicon carbide devices

Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices