Kaiyou Wang

City:

Beijing

Country:

China

Published Applications:

Last publication date:

2024-08-29

Top Assignees for applications by Kaiyou Wang

The entities that hold a legal rights for patent applications filed by inventor Wang Kaiyou:

INSTITUTE OF SEMICONDUCTORS, CHINESE ACADEMY OF SCIENCES 9 Beijing, China

Recent patent applications by Wang Kaiyou

Kaiyou Wang from Beijing, CN has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2024-08-29

US20240290367A1

Physics

SPIN-ORBIT TORQUE MAGNETORESISTIVE RANDOM ACCESS MEMORY AND METHOD OF OPERATING THE SAME

#2 | 2023-01-26

US20230024744A1

Physics

METHOD AND SYSTEM FOR OPTIMIZING PROBLEM-SOLVING BASED ON PROBABILISTIC BIT CIRCUITS

#3 | 2023-01-12

US20230011349A1

Physics

Function switchable magnetic random access memory and method for manufacturing the same

#4 | 2022-03-24

US20220088579A1

Performing operations; transporting

SEMICONDUCTOR MATERIAL BASED ON METAL NANOWIRES AND POROUS NITRIDE AND PREPARATION METHOD THEREOF

#5 | 2021-05-20

US20210148999A1

Physics

Spin valve with built-in electric field and spintronic device comprising the same

#6 | 2021-05-20

US20210148998A1

Physics

Spin valve and spintronic device comprising the same

#7 | 2020-07-02

US20200211609A1

Physics

Voltage control magnetic random storage unit, memory and logic device composed thereby

#8 | 2020-06-11

US20200185882A1

Electricity

GaN-based VCSEL chip based on porous DBR and manufacturing method of the same

#9 | 2020-01-30

US20200035843A1

Electricity

InGaN-based resonant cavity enhanced detector chip based on porous DBR

InventorID:

2631685 ⎘