HSINCHU
Taiwan
27
2026-04-16
The entities that hold a legal rights for patent applications filed by inventor WANG CHEN-JUNG:
CHEN-JUNG WANG from HSINCHU, TW has applied for patents for these inventions. The list has both pending applications and granted patents:
MEMORY DEVICE AND METHOD FOR FORMING THEREOF
#2 | 2025-08-07INTEGRATED CIRCUIT
#3 | 2025-04-24GRADIENT PROTECTION LAYER IN MTJ MANUFACTURING
#4 | 2024-07-11MAGNETIC TUNNEL JUNCTION DEVICES
#5 | 2024-03-21Gradient protection layer in MTJ manufacturing
#6 | 2024-01-25ETCH MONITORING AND PERFORMING
#7 | 2024-01-18Integrated circuit
#8 | 2023-11-23Semiconductor structure and method for forming the same
#9 | 2023-08-31Semiconductor structure and manufacturing method of the same
#10 | 2023-08-17Metal Etching Stop Layer in Magnetic Tunnel Junction Memory Cells
#11 | 2023-03-02Etch monitoring and performing
#12 | 2022-11-17Gradient protection layer in MTJ manufacturing
#13 | 2022-10-20Magnetic tunnel junction device
#14 | 2022-08-25MEMORY DEVICE AND METHOD FOR FORMING THEREOF
#15 | 2022-06-16Integrated circuit
#16 | 2022-04-28Semiconductor structure and method for forming the same
#17 | 2022-01-27Memory device structure and method for forming the same
#18 | 2021-12-09Metal etching stop layer in magnetic tunnel junction memory cells
#19 | 2021-07-22Magnetic of forming magnetic tunnel junction device using protective mask
#20 | 2021-04-01Gradient protection layer in MTJ manufacturing
#21 | 2021-03-11Semiconductor structure and manufacturing method of the same
#22 | 2020-08-20Integrated circuit
#23 | 2020-04-30Gradient protection layer in MTJ manufacturing
#24 | 2020-04-02Metal etching stop layer in magnetic tunnel junction memory cells
#25 | 2020-04-02Memory device and fabrication method thereof
#26 | 2020-02-27Integrated circuit and fabrication method thereof
#27 | 2020-01-30Semiconductor structure and manufacturing method of the same
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