Inventor profile of:

CHEN-JUNG WANG

City:

HSINCHU

Country:

Taiwan

Published Applications:

27

Last publication date:

2026-04-16

Top Assignees for applications by CHEN-JUNG WANG

The entities that hold a legal rights for patent applications filed by inventor WANG CHEN-JUNG:

Recent patent applications by WANG CHEN-JUNG

CHEN-JUNG WANG from HSINCHU, TW has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-04-16
US20260107472A1
Electricity

MEMORY DEVICE AND METHOD FOR FORMING THEREOF

#2 | 2025-08-07
US20250255190A1
Electricity

INTEGRATED CIRCUIT

#3 | 2025-04-24
US20250133967A1
Electricity

GRADIENT PROTECTION LAYER IN MTJ MANUFACTURING

#4 | 2024-07-11
US20240237551A1
Electricity

MAGNETIC TUNNEL JUNCTION DEVICES

#5 | 2024-03-21
US20240099150A1
Electricity

Gradient protection layer in MTJ manufacturing

#6 | 2024-01-25
US20240030073A1
Electricity

ETCH MONITORING AND PERFORMING

#7 | 2024-01-18
US20240023457A1
Electricity

Integrated circuit

#8 | 2023-11-23
US20230380293A1
Electricity

Semiconductor structure and method for forming the same

#9 | 2023-08-31
US20230276715A1
Electricity

Semiconductor structure and manufacturing method of the same

#10 | 2023-08-17
US20230263068A1
Electricity

Metal Etching Stop Layer in Magnetic Tunnel Junction Memory Cells

#11 | 2023-03-02
US20230062426A1
Electricity

Etch monitoring and performing

#12 | 2022-11-17
US20220367794A1
Electricity

Gradient protection layer in MTJ manufacturing

#13 | 2022-10-20
US20220336727A1
Electricity

Magnetic tunnel junction device

#14 | 2022-08-25
US20220271087A1
Electricity

MEMORY DEVICE AND METHOD FOR FORMING THEREOF

#15 | 2022-06-16
US20220190237A1
Electricity

Integrated circuit

#16 | 2022-04-28
US20220131070A1
Electricity

Semiconductor structure and method for forming the same

#17 | 2022-01-27
US20220029091A1
Electricity

Memory device structure and method for forming the same

#18 | 2021-12-09
US20210384418A1
Electricity

Metal etching stop layer in magnetic tunnel junction memory cells

#19 | 2021-07-22
US20210226118A1
Electricity

Magnetic of forming magnetic tunnel junction device using protective mask

#20 | 2021-04-01
US20210098695A1
Electricity

Gradient protection layer in MTJ manufacturing

#21 | 2021-03-11
US20210074909A1
Electricity

Semiconductor structure and manufacturing method of the same

#22 | 2020-08-20
US20200266340A1
Electricity

Integrated circuit

#23 | 2020-04-30
US20200136026A1
Electricity

Gradient protection layer in MTJ manufacturing

#24 | 2020-04-02
US20200106008A1
Electricity

Metal etching stop layer in magnetic tunnel junction memory cells

#25 | 2020-04-02
US20200106007A1
Electricity

Memory device and fabrication method thereof

#26 | 2020-02-27
US20200066580A1
Electricity

Integrated circuit and fabrication method thereof

#27 | 2020-01-30
US20200035907A1
Electricity

Semiconductor structure and manufacturing method of the same

InventorID:

2631725 ⎘