HSINCHU
Taiwan
20
2025-04-24
The entities that hold a legal rights for patent applications filed by inventor FU QIANG:
QIANG FU from HSINCHU, TW has applied for patents for these inventions. The list has both pending applications and granted patents:
GRADIENT PROTECTION LAYER IN MTJ MANUFACTURING
#2 | 2024-11-14MAGNETIC TUNNEL JUNCTION DEVICES
#3 | 2024-08-01LOW-RESISTANCE CONTACT TO TOP ELECTRODES FOR MEMORY CELLS AND METHODS FOR FORMING THE SAME
#4 | 2024-07-11MAGNETIC TUNNEL JUNCTION DEVICES
#5 | 2024-03-21Gradient protection layer in MTJ manufacturing
#6 | 2023-10-12Top-interconnection metal lines for a memory array device and methods for forming the same
#7 | 2023-08-31Semiconductor structure and manufacturing method of the same
#8 | 2023-08-10Magnetic tunnel junction device and method
#9 | 2022-11-17Gradient protection layer in MTJ manufacturing
#10 | 2022-10-20Magnetic tunnel junction device
#11 | 2022-10-13Semiconductor device and manufacturing method thereof
#12 | 2022-03-03Semiconductor device and manufacturing method thereof
#13 | 2021-12-16Top-interconnection metal lines for a memory array device and methods for forming the same
#14 | 2021-12-02Low-resistance contact to top electrodes for memory cells and methods for forming the same
#15 | 2021-12-02Magnetic tunnel junction device and method
#16 | 2021-07-22Magnetic of forming magnetic tunnel junction device using protective mask
#17 | 2021-04-01Gradient protection layer in MTJ manufacturing
#18 | 2021-03-11Semiconductor structure and manufacturing method of the same
#19 | 2020-04-30Gradient protection layer in MTJ manufacturing
#20 | 2020-01-30Semiconductor structure and manufacturing method of the same
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