Inventor profile of:

Jun ARIMA

City:

TOKYO

Country:

Japan

Published Applications:

25

Last publication date:

2026-01-08

Top Assignees for applications by Jun ARIMA

The entities that hold a legal rights for patent applications filed by inventor ARIMA Jun:

Recent patent applications by ARIMA Jun

Jun ARIMA from TOKYO, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-01-08
US20260013157A1
Electricity

SCHOTTKY BARRIER DIODE

#2 | 2026-01-01
US20260006809A1
Electricity

JUNCTION BARRIER SCHOTTKY DIODE

#3 | 2025-11-20
US20250359097A1
Electricity

SCHOTTKY BARRIER DIODE

#4 | 2025-05-29
US20250176199A1
Electricity

SCHOTTKY BARRIER DIODE

#5 | 2025-03-06
US20250081485A1
Electricity

JUNCTION BARRIER SCHOTTKY DIODE

#6 | 2025-01-09
US20250015201A1
Electricity

JUNCTION BARRIER SCHOTTKY DIODE

#7 | 2025-01-02
US20250003110A1
Chemistry; metallurgy

CRUCIBLE, CRYSTAL PRODUCTION METHOD, AND SINGLE CRYSTAL

#8 | 2024-09-19
US20240313130A1
Electricity

JUNCTION BARRIER SCHOTTKY DIODE

#9 | 2024-09-19
US20240313129A1
Electricity

SCHOTTKY BARRIER DIODE

#10 | 2024-05-23
US20240170335A1
Electricity

GALLIUM OXIDE SUBSTRATE DIVISION METHOD

#11 | 2024-02-29
US20240072179A1
Electricity

SCHOTTKY BARRIER DIODE

#12 | 2024-02-15
US20240055536A1
Electricity

SCHOTTKY BARRIER DIODE

#13 | 2023-11-02
US20230352601A1
Electricity

SCHOTTKY BARRIER DIODE

#14 | 2023-04-13
US20230113129A1
Electricity

Schottky barrier diode

#15 | 2023-02-09
US20230039171A1
Electricity

SCHOTTKY BARRIER DIODE

#16 | 2022-09-29
US20220307157A1
Chemistry; metallurgy

Crystal manufacturing method, crystal manufacturing apparatus and single crystal

#17 | 2022-02-24
US20220056611A1
Chemistry; metallurgy

Single-crystal growing crucible, single-crystal production method and single crystal

#18 | 2021-11-04
US20210343880A1
Electricity

Schottky barrier diode

#19 | 2021-11-04
US20210343879A1
Electricity

Schottky barrier diode

#20 | 2021-06-03
US20210167225A1
Electricity

Schottky barrier diode

#21 | 2021-04-22
US20210119062A1
Electricity

Schottky barrier diode

#22 | 2021-01-21
US20210020789A1
Electricity

Trench MOS schottky diode and method for producing same

#23 | 2021-01-21
US20210017668A1
Chemistry; metallurgy

Die for EFG-based single crystal growth, EFG-based single crystal growth method, and EFG single crystal

#24 | 2020-09-10
US20200287060A1
Electricity

Schottky barrier diode

#25 | 2020-02-20
US20200058804A1
Electricity

Schottky barrier diode and electronic circuit provided with same

InventorID:

2651419 ⎘