San Jose, California
United States
18
2025-08-28
The entities that hold a legal rights for patent applications filed by inventor Worledge Daniel:
Daniel Worledge from San Jose, US has applied for patents for these inventions. The list has both pending applications and granted patents:
PERPENDICULAR SPIN-ORBIT TORQUE MAGNETIC RANDOM ACCESS MEMORY
#2 | 2024-10-31MRAM WITH ASYMMETRIC STRUCTURE
#3 | 2024-10-17MTJ PILLAR HAVING TEMPERATURE-INDEPENDENT DELTA
#4 | 2024-06-06MEMORY STRUCTURE WITH NON-ION BEAM ETCHED MTJ AND TOP ELECTRODE
#5 | 2023-02-16Spin-orbit-torque magnetoresistive random-access memory array
#6 | 2022-09-22Low RA narrow base modified double magnetic tunnel junction structure
#7 | 2022-09-22Amorphous spin diffusion layer for modified double magnetic tunnel junction structure
#8 | 2022-04-21MULTILAYERED MAGNETIC FREE LAYER STRUCTURE FOR SPIN-TRANSFER TORQUE (STT) MRAM
#9 | 2021-08-19STT MRAM matertails with heavy metal insertion
#10 | 2021-06-24Magnetic tunnel junction having all-around structure
#11 | 2021-04-22Multilayered magnetic free layer structure containing an ordered magnetic alloy first magnetic free layer for spin-transfer torque (STT) MRAM
#12 | 2020-08-13MTJ PILLAR HAVING TEMPERATURE-INDEPENDENT DELTA
#13 | 2020-08-06Multilayered magnetic free layer structure containing an ordered magnetic alloy first magnetic free layer for spin-transfer torque (STT) MRAM
#14 | 2020-08-06Dynamic redundancy for memory
#15 | 2020-07-30Multilayered magnetic free layer structure for spin-transfer torque (STT) MRAM
#16 | 2020-05-14MULTILAYERED MAGNETIC FREE LAYER STRUCTURE FOR SPIN-TRANSFER TORQUE (STT) MRAM
#17 | 2020-02-27SIMPLIFIED DOUBLE MAGNETIC TUNNEL JUNCTIONS
#18 | 2020-02-20Multilayered magnetic free layer structure for spin-transfer torque (STT) MRAM
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