Ibrahim Khalil

TRANSISTOR WITH SOURCE MANIFOLD IN NON-ACTIVE DIE REGION

TRANSISTOR HEAT DISSIPATION STRUCTURE

TRANSISTOR DIE WITH PRIMARY AND ANCILLARY TRANSISTOR ELEMENTS

Transistor circuits with shielded reference transistors

Transistor with integrated passive components

Semiconductor device with an insulating region formed between a control electrode and a conductive element and method of fabrication therefor

SEMICONDUCTOR DEVICE WITH A GATE ELECTRODE HAVING MULTIPLE REGIONS AND METHOD OF FABRICATION THEREFOR

TRANSISTORS WITH SELF-ALIGNED SOURCE-CONNECTED FIELD PLATES

Transistor with center fed gate

SEMICONDUCTOR DEVICE WITH CONDUCTIVE ELEMENT FORMED OVER DIELECTRIC LAYERS AND METHOD OF FABRICATION THEREFOR

Semiconductor device with conductive elements formed over dielectric layers and method of fabrication therefor

Amplifier modules and systems with ground terminals adjacent to power amplifier die

Semiconductor device with a crossing region

Transistor with flip-chip topology and power amplifier containing same

Radio frequency power dies having flip-chip architectures and power amplifier modules containing the same

Transistor with I/O ports in an active area of the transistor

Semiconductor device with isolation structure

Transistor die with output bondpad at the input side of the die, and power amplifiers including such dies

Integrated multiple-path power amplifier with interdigitated transistors

Linearity enhancement of high power amplifiers

Feed structure, electrical component including the feed structure, and module

Transistor shield structure, packaged device, and method of manufacture

Transistor with shield structure, packaged device, and method of manufacture