Inventor profile of:

Tsuyoshi Arigane

City:

Akishima

Country:

Japan

Published Applications:

18

Last publication date:

2014-10-30

Top Assignees for applications by Tsuyoshi Arigane

The entities that hold a legal rights for patent applications filed by inventor Arigane Tsuyoshi:

Recent patent applications by Arigane Tsuyoshi

Tsuyoshi Arigane from Akishima, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2014-10-30
US20140322874A1
Electricity

Nonvolatile semiconductor device and method of manufacturing the same

#2 | 2014-04-03
US20140092688A1
Physics

Non-Volatile Semiconductor Storage Device

#3 | 2014-01-09
US20140008716A1
Electricity

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

#4 | 2013-06-06
US20130140622A1
Electricity

Nonvolatile semiconductor device and method of manufacturing the same

#5 | 2011-10-06
US20110242888A1
Electricity

Semiconductor device and manufacturing method thereof

#6 | 2011-09-29
US20110235419A1
Physics

NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE

#7 | 2010-10-14
US20100261327A1
Electricity

Non-volatile semiconductor memory device and method of manufacturing the same

#8 | 2010-08-05
US20100193856A1
Electricity

Semiconductor device and method of manufacturing the same

#9 | 2009-11-05
US20090273014A1
Electricity

NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

#10 | 2009-05-28
US20090134449A1
Electricity

Non-volatile semiconductor memory device and method of manufacturing the same

#11 | 2009-02-26
US20090052259A1
Physics

NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE

#12 | 2009-02-26
US20090050956A1
Electricity

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

#13 | 2009-02-26
US20090050955A1
Electricity

Nonvolatile semiconductor device including a field effect transistor having a charge storage layer of predetermined length

#14 | 2008-06-19
US20080142876A1
Electricity

Nonvolatile semiconductor storage device having an element formation region and a plurality of element isolation regions and manufacturing method of the same

#15 | 2008-01-31
US20080025107A1
Physics

Semiconductor device

#16 | 2007-05-17
US20070109870A1
Electricity

Semiconductor memory device

#17 | 2006-08-17
US20060183284A1
Physics

Non-volatile semiconductor storage device and the manufacturing method thereof

#18 | 2006-02-23
US20060039195A1
Electricity

Semiconductor memory device

InventorID:

270339 ⎘