Tempe, Arizona
United States
6
2023-04-06
The entities that hold a legal rights for patent applications filed by inventor Fu Kai:
Kai Fu from Tempe, US has applied for patents for these inventions. The list has both pending applications and granted patents:
GaN vertical-channel junction field-effect transistors with regrown p-GaN by metal organic chemical vapor deposition (MOCVD)
#2 | 2022-01-13GaN vertical-channel junction field-effect transistors with regrown p-GaN by metal organic chemical vapor deposition (MOCVD)
#3 | 2021-08-05GaN-based threshold switching device and memory diode
#4 | 2021-07-01Plasma-based edge terminations for gallium nitride power devices
#5 | 2021-04-08Low-leakage regrown GaN p-n junctions for GaN power devices
#6 | 2020-05-07GaN-based threshold switching device and memory diode
2726103 ⎘