Reet Chaudhuri

City:

Ithaca, New York

Country:

United States

Published Applications:

Last publication date:

2022-06-23

Top Assignees for applications by Reet Chaudhuri

The entities that hold a legal rights for patent applications filed by inventor Chaudhuri Reet:

Reet Chaudhuri from Ithaca, US has applied for patents for these inventions. The list has both pending applications and granted patents:

INTEGRATED ELECTRONICS ON THE ALUMINUM NITRIDE PLATFORM

Polarization-induced 2D hole gases for high-voltage p-channel transistors

RF high-electron-mobility transistors including group III-N stress neutral barrier layers with high breakdown voltages

High-voltage p-channel FET based on III-nitride heterostructures

InventorID:

2726150 ⎘