🔗 Permalink

Inventor profile of:

Thomas Ernst

City:

Morette

Country:

France

Published Applications:

21

Last publication date:

2020-08-13

Top Assignees for applications by Thomas Ernst

The entities that hold a legal rights for patent applications filed by inventor Ernst Thomas:

Commissariat A L'Energie Atomique 11 Paris, France
Commissariat A L'Energie Atomique Et Aux Energies Alternatives 10 Paris, France
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT 3 Paris, France
COMM. A L'ENER. ATOM. ET AUX ENERGIES ALT. 1 Paris, France
Comm. A L'Energie Atom. Et Aux Energies Alterna 1 Paris, France
INSTITUT NATIONAL POLYTECHNIQUE DE GRENOBLE 1 Grenoble, France
COMMISSARIAT A L'ENERGIE ATOMIQUE 1 Grenoble, France
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE 1 PARIS, France
Centre National de al Recherche Scientifique 1 Paris, France
California Institute of Technology 1 Pasadena, CA United States
Commissariat à l' énergie atomique et aux énergies alternatives 1 Paris, France

Recent patent applications by Ernst Thomas

Thomas Ernst from Morette, FR has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2020-08-13

US20200258783A1

Field effect transistor with an atomically thin channel

#2 | 2016-03-31

US20160093507A1

Method of localized annealing of semi-conducting elements using a reflective area

#3 | 2015-04-23

US20150107336A1

Electromechanical detection device, particularly for gravimetric detection, and method for manufacturing the device

#4 | 2013-08-08

US20130203248A1

INTEGRATED CIRCUIT HAVING A JUNCTIONLESS DEPLETION-MODE FET DEVICE

#5 | 2013-07-25

US20130187276A1

Microelectronic device having metal interconnection levels connected by programmable vias

#6 | 2013-06-06

US20130144542A1

Analysis device including a MEMS and/or NEMS network

#7 | 2012-05-31

US20120134206A1

Multilevel memory device

#8 | 2011-11-17

US20110281412A1

Production of a transistor gate on a multibranch channel structure and means for isolating this gate from the source and drain regions

#9 | 2011-07-14

US20110169067A1

Structure and production process of a microelectronic 3D memory device of flash NAND type

#10 | 2011-05-26

US20110124161A1

Structure and method for fabricating a microelectronic device provided with one or more quantum wires able to form one or more transistor channels

#11 | 2011-03-24

US20110067985A1

Performing operations; transporting

Method of fabricating an electromechanical component using graphene

#12 | 2010-10-28

US20100273317A1

Method of growing, on a dielectric material, nanowires made of semi-conductor materials connecting two electrodes

#13 | 2010-10-21

US20100264496A1

SRAM memory cell provided with transistors having a vertical multichannel structure

#14 | 2010-09-02

US20100219489A1

Performing operations; transporting

Nanowire sensor device

#15 | 2009-10-01

US20090246946A1

Method of fabricating a microelectronic structure of a semiconductor on insulator type with different patterns

#16 | 2009-08-13

US20090203203A1

Chemistry; metallurgy

Method for the fabrication of a transistor gate using at least one electron beam

#17 | 2009-05-14

US20090124050A1

Method of manufacturing nanowires parallel to the supporting substrate

#18 | 2009-04-02

US20090085119A1

Double-gate transistor structure equipped with a multi-branch channel

#19 | 2008-11-13

US20080277691A1

Production of a Transistor Gate on a Multibranch Channel Structure and Means for Isolating This Gate From the Source and Drain Regions

#20 | 2008-06-26

US20080149919A1

Structure and method for realizing a microelectronic device provided with a number of quantum wires capable of forming one or more transistor channels

#21 | 2007-10-25

US20070246702A1

Fabrication of active areas of different natures directly onto an insulator: application to the single or double gate MOS transistor

InventorID:

277489 ⎘