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Inventor profile of:

David Z. Ting

City:

Arcadia, California

Country:

United States

Published Applications:

Last publication date:

2023-04-13

Top Assignees for applications by David Z. Ting

The entities that hold a legal rights for patent applications filed by inventor Ting David Z.:

California Institute of Technology 13 Pasadena, CA United States
The United States of America as represented by the Administrator of the National Aeronautics and Space Administration 1 Washington, DC United States

Recent patent applications by Ting David Z.

David Z. Ting from Arcadia, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2023-04-13

US20230114881A1

Electricity

Barrier infrared detector architecture for focal plane arrays

#2 | 2019-01-10

US20190013427A1

Electricity

Enhanced quantum efficiency barrier infrared detectors

#3 | 2017-10-24

US14998990

Electricity

Unipolar barrier dual-band infrared detectors

#4 | 2016-11-17

US20160336476A1

Electricity

P-compensated and P-doped superlattice infrared detectors

#5 | 2015-05-28

US20150145091A1

Electricity

Single-band and dual-band infrared detectors

#6 | 2014-08-14

US20140225064A1

Electricity

Barrier infrared detectors on lattice mismatch substrates

#7 | 2013-06-13

US20130146998A1

Electricity

Single-band and dual-band infrared detectors

#8 | 2012-06-14

US20120145996A1

Electricity

Barrier infrared detector

#9 | 2011-07-21

US20110176577A1

Physics

SUPERPIXEL MULTI-WAVEBAND PHOTODETECTOR ARRAY FOR REMOTE TEMPERATURE MEASUREMENT

#10 | 2010-06-24

US20100155777A1

Electricity

Digital alloy absorber for photodetectors

#11 | 2010-03-25

US20100072514A1

Electricity

High operating temperature barrier infrared detector with tailorable cutoff wavelength

#12 | 2010-01-14

US20100006822A1

Performing operations; transporting

Complementary barrier infrared detector (CBIRD)

#13 | 2009-10-06

US11188226

Ultra compact spectrometer apparatus and method using photonic crystals

#14 | 2009-05-21

US20090127462A1

Electricity

nBn and pBp infrared detectors with graded barrier layer, graded absorption layer, or chirped strained layer super lattice absorption layer

InventorID:

281852 ⎘