Ramamoorthy Ramesh

THREE-DIMENSIONAL STACK OF HETEROGENEOUS MEMORY AND COMPUTE DIES

PILLAR CAPACITOR STRUCTURE FOR HIGH DENSITY MEMORY APPLICATIONS

Multiplier with non-linear polar material

High density ferroelectric random access memory (FeRAM) devices and methods of fabrication

PLANAR FERROELECTRIC MEMORY DEVICE

METHOD OF FORMING A MAJORITY GATE BASED LOW POWER FERROELECTRIC BASED ADDER WITH RESET MECHANISM

FERROELECTRIC CAPACITOR INTEGRATED WITH A LOGIC DEVICE

Method for conditioning majority or minority gate

Integration of ferroelectric memory devices having stacked electrodes with transistors

Method of forming 3D stacked compute and memory with copper pillars

Low power non-linear polar material based threshold logic gate multiplier

High-density low voltage ferroelectric differential memory bit-cell with shared plate- line

High density ferroelectric random access memory (FeRAM) devices and methods of fabrication

PEROVSKITE-BASED MAGNETOELECTRIC SPIN-ORBIT LOGIC DEVICES

TECHNOLOGIES FOR TRANSISTORS WITH A FERROELECTRIC GATE DIELECTRIC

Majority gate based low power ferroelectric based adder with reset mechanism

Method of fabricating a perovskite-material based planar capacitor using rapid thermal annealing (RTA) methodologies

3D stacked compute and memory with copper pillars

Majority logic gate having paraelectric input capacitors coupled to a conditioning scheme

Pillar capacitor and method of fabricating such

Ferroelectric device film stacks with texturing layer which is part of a bottom electrode, and method of forming such

Method of fabricating a perovskite-material based trench capacitor using rapid thermal annealing (RTA) methodologies

Rapid thermal annealing (RTA) methodologies for integration of perovskite-material based trench capacitors

Rapid thermal annealing (RTA) methodologies for integration of perovskite-material based memory devices

Ferroelectric device film stacks with texturing layer which is part of a bottom electrode and a barrier, and method of forming such

Majority logic gate having ferroelectric input capacitors and a pulsing scheme coupled to a conditioning logic

Ferroelectric device film stacks with texturing layer, and method of forming such

MANGANESE OR SCANDIUM DOPED FERROELECTRIC DEVICE AND BIT-CELL

MANGANESE OR SCANDIUM DOPED FERROELECTRIC PLANAR DEVICE AND DIFFERENTIAL BIT-CELL

Apparatus with selectable majority gate and combinational logic gate outputs

Ferroelectric capacitor integrated with logic

Majority logic gate with input paraelectric capacitors

Method of forming a 3D stacked compute and memory

Fabrication of a majority logic gate having non-linear input capacitors

HIGH-DENSITY LOW VOLTAGE NON-VOLATILE MEMORY WITH UNIDIRECTIONAL PLATE-LINE AND BIT-LINE AND PILLAR CAPACITOR

3D stacked ferroelectric compute and memory

Integration of ferroelectric memory devices with transistors

2-input NAND gate with non-linear input capacitors

Majority logic gate with non-linear input capacitors and conditioning logic

Ferroelectric based latch

Majority logic gate based flip-flop with non-linear polar material

Low power ferroelectric based majority logic gate multiplier

Integration of a ferroelectric memory device with a transistor

Majority gate based low power ferroelectric based adder with reset mechanism

Majority logic gate based XOR logic gate with non-linear input capacitors

Majority logic gate based and-or-invert logic gate with non-linear input capacitors

Majority logic gate with non-linear input capacitors

Majority logic gate based sequential circuit

Low power ferroelectric based majority logic gate adder

Method for using and forming low power ferroelectric based majority logic gate adder

Linear input and non-linear output threshold logic gate

Low power ferroelectric based majority logic gate carry propagate and serial adder

Ferroelectric capacitor integrated with logic

Ferroelectric capacitor and method of patterning such

Integration method of ferroelectric memory array

Pillar capacitor and method of fabricating such

Artificial intelligence processor with three-dimensional stacked memory

Artificial intelligence processor with three-dimensional stacked memory

High-density low voltage non-volatile memory with unidirectional plate-line and bit-line and pillar capacitor

High-density low voltage non-volatile memory with unidirectional plate-line and bit-line and pillar capacitor

High-density low voltage non-volatile differential memory bit-cell with shared plate-line

High-density low voltage non-volatile memory with unidirectional plate-line and bit-line and pillar capacitor

High-density low voltage non-volatile differential memory bit-cell with shared plate line

Ferroic materials having domain walls and related devices

Thin film bismuth iron oxides useful for piezoelectric devices

Complex oxides useful for thermoelectric energy conversion

MEDIA WITH TETRAGONALLY-STRAINED RECORDING LAYER HAVING IMPROVED SURFACE ROUGHNESS

Bismuth ferrite films and devices grown on silicon

Oriented bismuth ferrite films grown on silicon and devices formed thereby