Matthias Passlack

City:

Hsinchu

Country:

China

Published Applications:

Last publication date:

2022-08-18

Top Assignees for applications by Matthias Passlack

The entities that hold a legal rights for patent applications filed by inventor Passlack Matthias:

Matthias Passlack from Hsinchu, CN has applied for patents for these inventions. The list has both pending applications and granted patents:

Tunnel field-effect transistor with reduced trap-assisted tunneling leakage

Tunnel field-effect transistor with reduced trap-assisted tunneling leakage

InventorID:

2846247 ⎘