Inventor profile of:

Shawn D. Lyonsmith

City:

Boise, Idaho

Country:

United States

Published Applications:

17

Last publication date:

2025-02-27

Top Assignees for applications by Shawn D. Lyonsmith

The entities that hold a legal rights for patent applications filed by inventor Lyonsmith Shawn D.:

Recent patent applications by Lyonsmith Shawn D.

Shawn D. Lyonsmith from Boise, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2025-02-27
US20250071996A1
Electricity

MEMORY DEVICE INCLUDING MULTIPLE DECKS OF MEMORY CELLS AND PILLARS EXTENDING THROUGH THE DECKS

#2 | 2024-05-09
US20240153062A1
Physics

SYSTEM FOR PREDICTING PROPERTIES OF STRUCTURES, IMAGER SYSTEM, AND RELATED METHODS

#3 | 2023-04-20
US20230117100A1
Electricity

Memory device including multiple decks of memory cells and pillars extending through the decks

#4 | 2023-02-09
US20230043786A1
Electricity

SEMICONDUCTOR DEVICE HAVING A STACK OF DATA LINES WITH CONDUCTIVE STRUCTURES ON BOTH SIDES THEREOF

#5 | 2022-03-03
US20220068956A1
Electricity

Memory device including multiple decks of memory cells and pillars extending through the decks

#6 | 2021-04-29
US20210126007A1
Electricity

Semiconductor device having a stack of data lines with conductive structures on both sides thereof

#7 | 2021-03-25
US20210090246A1
Physics

System for predicting properties of structures, imager system, and related methods

#8 | 2020-02-13
US20200051235A1
Physics

System for predicting properties of structures, imager system, and related methods

#9 | 2019-11-21
US20190355418A1
Physics

Non-contact electron beam probing techniques and related structures

#10 | 2019-11-07
US20190341122A1
Physics

Non-contact measurement of memory cell threshold voltage

#11 | 2019-06-20
US20190189237A1
Physics

Non-contact measurement of memory cell threshold voltage

#12 | 2019-06-20
US20190189209A1
Physics

Non-contact electron beam probing techniques and related structures

#13 | 2013-01-10
US20130011940A1
Electricity

Method of reducing damage to an electron beam inspected semiconductor substrate, and methods of inspecting a semiconductor substrate

#14 | 2010-12-23
US20100320384A1
Physics

Method of removing or deposting material on a surface including material selected to decorate a particle on the surface for imaging

#15 | 2008-03-27
US20080076263A1
Electricity

Method of reducing electron beam damage on post W-CMP wafers

#16 | 2008-01-10
US20080006786A1
Physics

Electron induced chemical etching/deposition for enhanced detection of surface defects

#17 | 2005-07-19
US10447808
-

Biasable isolation regions using epitaxially grown silicon between the isolation regions

InventorID:

28562 ⎘