Brewster, New York
United States
20
2014-09-18
The entities that hold a legal rights for patent applications filed by inventor DORIS Bruce:
Bruce DORIS from Brewster, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Forming strained and relaxed silicon and silicon germanium fins on the same wafer
#2 | 2014-09-18Forming strained and relaxed silicon and silicon germanium fins on the same wafer
#3 | 2014-05-29Integrated circuit with a thin body field effect transistor and capacitor
#4 | 2014-05-22Integrated circuit with a thin body field effect transistor and capacitor
#5 | 2014-01-09Strained silicon and strained silicon germanium on insulator
#6 | 2014-01-09Strained silicon and strained silicon germanium on insulator field-effect transistor
#7 | 2013-08-22MOSFET with work function adjusted metal backgate
#8 | 2013-07-11Integrated circuit with a thin body field effect transistor and capacitor
#9 | 2013-07-11Integrated circuit with a thin body field effect transistor and capacitor
#10 | 2013-06-13Method and structure for forming on-chip high quality capacitors with ETSOI transistors
#11 | 2013-05-02MOSFET with thin semiconductor channel and embedded stressor with enhanced junction isolation
#12 | 2013-01-10Raised source/drain structure for enhanced strain coupling from stress liner
#13 | 2012-12-27MOSFET with recessed channel film and abrupt junctions
#14 | 2012-11-29Raised source/drain structure for enhanced strain coupling from stress liner
#15 | 2012-10-18MOSFET with recessed channel film and abrupt junctions
#16 | 2012-09-20Fully-depleted SON
#17 | 2011-12-29FET with self-aligned back gate
#18 | 2011-10-20Raised source/drain structure for enhanced strain coupling from stress liner
#19 | 2011-03-17Structure and method to minimize regrowth and work function shift in high-k gate stacks
#20 | 2006-05-09Methods of planarization
28661 ⎘